Type IPP041N04N G IPB041N04N G % & 3 Power-Transistor Product Summary Features V 40 V DS Fast switching MOSFET for SMPS R 4.1 mW DS(on),max Optimized technology for DC/DC converters I 80 A D 1) Qualified according to JEDEC for target applications N-channel, normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 100% Avalanche tested Pb-free plating RoHS compliant Halogen-free according to IEC61249-2-21 Type IPB041N04N G IPP041N04N G Package PG-TO263-3 PG-TO220-3 Marking 041N04N 041N04N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I V =10 V, T =25 C 80 A D GS C V =10 V, T =100 C 80 GS C 2) I T =25 C Pulsed drain current 400 D,pulse C 3) I T =25 C Avalanche current, single pulse 80 AS C E I =80 A, R =25 W Avalanche energy, single pulse 60 mJ AS D GS Gate source voltage V 20 V GS 1) J-STD20 and JESD22 Rev. 1.2 page 1 2009-12-17IPP041N04N G IPB041N04N G Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit Power dissipation P T =25 C 94 W tot C Operating and storage temperature T , T -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1.6 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 4) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =1 mA 40 - - V (BR)DSS GS D V V =V , I =45 A Gate threshold voltage 2 - 4 GS(th) DS GS D V =40 V, V =0 V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25 C j V =40 V, V =0 V, DS GS - 10 100 T =125 C j I V =20 V, V =0 V Gate-source leakage current - 10 100 nA GSS GS DS 5) R V =10 V, I =80 A - 3.3 4.1 Drain-source on-state resistance mW DS(on) GS D Gate resistance R - 1.6 - W G V >2 I R , DS D DS(on)max g Transconductance 50 100 - S fs I =80 A D 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 5) Measured from drain tab to source pin Rev. 1.2 page 2 2009-12-17