X-On Electronics has gained recognition as a prominent supplier of IPP04CN10N G MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPP04CN10N G MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPP04CN10N G Infineon

IPP04CN10N G electronic component of Infineon
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See Product Specifications
Part No.IPP04CN10N G
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET, N CH, 100A, 100V, PG-TO220-3
Datasheet: IPP04CN10N G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.396 ea
Line Total: USD 8.4 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 8.396
25 : USD 7.3357
100 : USD 6.1088
250 : USD 5.4042
1000 : USD 5.2761
2000 : USD 4.9319

   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IPP04CN10N G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPP04CN10N G and other electronic components in the MOSFETs category and beyond.

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IPB04CN10N G IPI04CN10N G IPP04CN10N G %& 2 Power-Transistor Product Summary Features V )(( K I R ( 492 6= C>2 = =6G6= R +&1 - >2 I .) R I46==6 E 82 E6 492 C86 I R AC 5F4E ) I )(( 7 R /6CJ = H C6D:DE2 46 R R U A6C2 E: 8 E6>A6C2 EFC6 R *3 7C66 =62 5 A=2 E: 8 , - 4 >A=:2 E ) R + F2 =:7:65 2 44 C5: 8 E % 7 C E2 C86E 2 AA=:42 E: R 562 = 7 C 9:89 7C6BF6 4J DH:E49: 8 2 5 DJ 49C FD C64E:7:42 E: R 2 = 86 7C66 2 44 C5: 8 E Type * ( ( * ( ( ** ( ( Package F>%JE*.+%+ F>%JE*.*%+ F>%JE**(%+ Marking (,9D)(D (,9D)(D (,9D)(D Maximum ratings, 2 E T U F =6DD E96CH:D6 DA64:7:65 W Value Parameter Symbol Conditions Unit * I E: F FD 5C2 : 4FCC6 E T U )(( 7 9 T U )(( 9 + I T U ,(( *F=D65 5C2 : 4FCC6 E bY R 9 E G2 =2 496 6 6C8J D: 8=6 AF=D6 I R )((( ZA 7I >I , V r*( K 2 E6 D FC46 G =E2 86 >I P T U * H6C 5:DD:A2 E: +(( L a a 9 T T ) A6C2 E: 8 2 5 DE C2 86 E6>A6C2 EFC6 U W aT 4=:>2 E:4 42 E68 CJ ( , 6G A2 86 IPB04CN10N G IPI04CN10N G IPP04CN10N G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics .96C>2 = C6D:DE2 46 F 4E: 42 D6 R % % (&- B L aUA9 .96C>2 = C6D:DE2 46 R >: :>2 = 7 EAC: E aUA7 * - F 4E: 2 >3 :6 E % % ,( 4> 4 =: 8 2 C62 Electrical characteristics, 2 E T U F =6DD E96CH:D6 DA64:7:65 W Static characteristics V V / I > C2 : D FC46 3 C62 <5 H G =E2 86 )(( % % K8H II >I V V 5V I W 2 E6 E9C6D9 =5 G =E2 86 * + , >aU I >I V / V / I >I 16C 82 E6 G =E2 86 5C2 : 4FCC6 E I % (&) ) s7 II T U W V / V / I >I % )( )(( T U W I V / V / 2 E6 D FC46 =62 <2 86 4FCC6 E % ) )(( 7 >II >I I R V / I C2 : D FC46 DE2 E6 C6D:DE2 46 % +&- ,&* >I V / I >I % +&* +&1 JE*.+ 2 E6 C6D:DE2 46 R % )&+ % > hV h6*hI hR I ZNe g J N P QbPaN PR 0+ ).- % I S I ) % -. 2 5 % - * FCC6 E :D =:>:E65 3 J 3 5H:C6 H:E9 2 R & 0 E96 49:A :D 2 3 =6 E 42 CCJ aUA9 + -66 7:8FC6 , . U 2 5 5FEJ 4J4=6 7 C / 4%-K WZNe T - * 6G:46 >> I >> I >> 6A IJ * , H:E9 4> 6 =2 J6C W > E9:4< 4 AA6C 2 C62 7 C 5C2 : 4 64E: * :D G6CE:42 = : DE:== 2 :C , 6G A2 86

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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