Type IPP055N03L G IPB055N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 5.5 m DS(on),max Optimized technology for DC/DC converters I 50 A D 1) Qualified according to JEDEC for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Avalanche rated Pb-free plating RoHS compliant Halogen-free according to IEC61249-2-21 Type IPP055N03L G IPB055N03L G PG-TO220-3-1 PG-TO263-3 Package Marking 055N03L 055N03L Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I V =10 V, T =25 C 50 A D GS C V =10 V, T =100 C 50 GS C V =4.5 V, T =25 C 50 GS C V =4.5 V, GS 50 T =100 C C 2) I T =25 C 350 Pulsed drain current D,pulse C 3) I T =25 C 50 Avalanche current, single pulse AS C Avalanche energy, single pulse E I =35 A, R =25 60 mJ AS D GS I =50 A, V =24 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =175 C j,max V Gate source voltage 20 V GS 1) J-STD20 and JESD22 Rev. 1.04 page 1 2010-01-18IPP055N03L G IPB055N03L G Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit P T =25 C Power dissipation 68 W tot C Operating and storage temperature T , T -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 2.2 K/W thJC SMD version, device on PCB R minimal footprint - - 62 thJA 4) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =1 mA Drain-source breakdown voltage 30 - - V (BR)DSS GS D V V =V , I =250 A Gate threshold voltage 1 - 2.2 GS(th) DS GS D V =30 V, V =0 V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25 C j V =30 V, V =0 V, DS GS - 10 100 T =125 C j Gate-source leakage current I V =20 V, V =0 V - 10 100 nA GSS GS DS 5) Drain-source on-state resistance R V =4.5 V, I =30 A - 6.2 7.8 m DS(on) GS D V =10 V, I =30 A - 4.6 5.5 GS D R Gate resistance - 1.5 - G V >2 I R , DS D DS(on)max Transconductance g 38 75 - S fs I =30 A D 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 5) Measured from drain tab to source pin Rev. 1.04 page 2 2010-01-18