IPP084N06L3 G Infineon

Jf R IPB081N06L3 G IPP084N06L3 G %& 3 Power-Transistor Product Summary Features V .( K 9I R 562 = 7 C 9:89 7C6BF6 4J DH:E49: 8 2 5 DJ 4 C64 R 0&) - >2 I - R ) AE:>:K65 E649 = 8J 7 C 4 G6CE6CD I -( 6 9 R I46==6 E 82 E6 492 C86 I R AC 5F4E ) 9 R ( 492 6= = 8:4 =6G6= R 2 G2 =2 496 E6DE65 R *3 7C66 A=2 E: 8 , - 4 >A=:2 E ) R + F2 =:7:65 2 44 C5: 8 E 7 C E2 C86E 2 AA=:42 E: D R 2 = 86 7C66 2 44 C5: 8 E Type * ( & ** ( & Package F=%JE*.+%+ F=%JE**(%+ Marking (0)D(.B (0,D(.B Maximum ratings, 2 E T U F =6DD E96CH:D6 DA64:7:65 W Parameter Symbol Conditions Value Unit * I E: F FD 5C2 : 4FCC6 E T U -( 6 9 8 T U -( 8 + I T U *(( *F=D65 5C2 : 4FCC6 E 9 bY R 8 , E I R ,+ Z G2 =2 496 6 6C8J D: 8=6 AF=D6 6I 9 =I 2 E6 D FC46 G =E2 86 V r*( K =I * H6C 5:DD:A2 E: P T U /1 L a a 8 ) A6C2 E: 8 2 5 DE C2 86 E6>A6C2 EFC6 T T U W aT ) -. 2 5 - * FCC6 E :D =:>:E65 3 J 3 5H:C6 H:E9 2 R % 0 E96 49:A :D 2 3 =6 E 42 CCJ aU 8 + -66 7:8FC6 7 C > C6 56E2 :=65 : 7 C>2 E: , -66 7:8FC6 7 C > C6 56E2 :=65 : 7 C>2 E: , 6G A2 86 IPB081N06L3 G IPP084N06L3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics .96C>2 = C6D:DE2 46 F 4E: 42 D6 R % % )&1 A L aU 8 .96C>2 = C6D:DE2 46 R >: :>2 = 7 EAC: E aU 6 - F 4E: 2 >3 :6 E % % ,( 4>W 4 =: 8 2 C62 Electrical characteristics, 2 E T U F =6DD E96CH:D6 DA64:7:65 W Static characteristics V V / I > C2 : D FC46 3 C62 <5 H G =E2 86 .( % % K7H 9II =I 9 V V 4V I X 2 E6 E9C6D9 =5 G =E2 86 )&* )&/ *&* =aU 9I =I 9 V / V / 9I =I 16C 82 E6 G =E2 86 5C2 : 4FCC6 E I % (&) ) t6 9II T U W V / V / 9I =I % )( )(( T U W I V / V / 2 E6 D FC46 =62 <2 86 4FCC6 E % ) )(( 6 =II =I 9I R V / I C2 : D FC46 DE2 E6 C6D:DE2 46 % /&( 0&, 9 =I 9 V / I % 1&/ ),&+ =I 9 V / I =I 9 R C2 : D FC46 DE2 E6 C6D:DE2 46 % .&/ 0&) 9 IC9 V / I =I 9 % 1&, ),IC9 R 2 E6 C6D:DE2 46 % (&1 % = hV h5*hI hR 9I 9 9 ZNe J N P QbPaN PR g +- .1 % I S I 9 - * 6G:46 >> I >> I >> 6A IJ * , H:E9 4> 6 =2 J6C X> E9:4< 4 AA6C 2 C62 7 C 5C2 : 4 64E: * :D G6CE:42 = : DE:== 2 :C , 6G A2 86