X-On Electronics has gained recognition as a prominent supplier of IPP110N20NA MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPP110N20NA MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPP110N20NA Infineon

IPP110N20NA electronic component of Infineon
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See Product Specifications
Part No.IPP110N20NA
Manufacturer: Infineon
Category: MOSFETs
Description: Infineon Technologies MOSFET N-Ch 200V 88A TO220-3
Datasheet: IPP110N20NA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.623 ea
Line Total: USD 7.62 
Availability - 130
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
130
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 7.623
10 : USD 7.414
25 : USD 4.994
500 : USD 4.983

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
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Maximum Operating Temperature
Pd - Power Dissipation
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Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
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Series
Transistor Type
Brand
Forward Transconductance - Min
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Typical Turn-On Delay Time
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We are delighted to provide the IPP110N20NA from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPP110N20NA and other electronic components in the MOSFETs category and beyond.

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IPB107N20NA IPP110N20NA TM OptiMOS 3 Power-Transistor Product Summary Features V 200 V DS N-channel, normal level R 10.7 m W DS(on),max (TO263) Excellent gate charge x R product (FOM) DS(on) I 88 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Ideal for high-frequency switching and synchronous rectification Type IPB107N20NA IPP110N20NA Package PG-TO263-3 PG-TO220-3 Marking 107N20NA 110N20NA Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25C 88 A D C T =100C 63 C 1) I T =25C 352 Pulsed drain current D,pulse C E I =80A, R =25W Avalanche energy, single pulse 560 mJ AS D GS Reverse diode dv /dt dv /dt 10 kV/s V Gate source voltage 20 V GS P T =25C Power dissipation 300 W tot C Operating and storage temperature T , T -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 1) See figure 3 Rev. 2.1 page 1 2011-05-11IPB107N20NA IPP110N20NA Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 0.5 K/W thJC R minimal footprint - - 62 thJA Thermal resistance, junction - ambient 2) - - 40 6 cm2 cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =1mA 200 - - V (BR)DSS GS D V V =V , I =270A Gate threshold voltage 2 3 4 GS(th) DS GS D V =160V, V =0V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25C j V =160V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 1 100 nA GSS GS DS V =10V, I =88A, GS D R Drain-source on-state resistance - 9.9 11 m W DS(on) (TO220) V =10V, I =88A, GS D - 9.6 10.7 (TO263) 2) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.1 page 2 2011-05-11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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