IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G TM OptiMOS 3 Power-Transistor Product Summary Features V 150 V DS N-channel, normal level R 10.8 mW DS(on),max (TO263) Excellent gate charge x R product (FOM) DS(on) I 83 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant Halogen free 1) Qualified according to JEDEC for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Type IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G Package PG-TO263 PG-TO220-3 PG-TO262-3 Marking 108N15N 111N15N 111N15N Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25C Continuous drain current 83 A D C T =100C 59 C 2) I T =25C 332 Pulsed drain current D,pulse C E Avalanche energy, single pulse I =83A, R =25W 330 mJ AS D GS V Gate source voltage 20 V GS Power dissipation P T =25C 214 W tot C T , T Operating and storage temperature -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 2) See figure 3 Rev. 2.2 page 1 2017-02-23IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 0.7 K/W thJC R minimal footprint - - 62 thJA Thermal resistance, junction - ambient 3) - - 40 6 cm2 cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 150 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =160A 2 3 4 GS(th) DS GS D V =120V, V =0V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25C j V =120V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 1 100 nA GSS GS DS V =10V, I =83A, GS D R Drain-source on-state resistance - 9.4 11.1 mW DS(on) (TO220 TO262) V =10V, I =83A, GS D - 9.1 10.8 (TO263) V =8V, I =41A, GS D - 9.5 11.3 (TO220 TO262) V =8V, I =41A, GS D - 9.2 11 (TO263) R Gate resistance - 2.4 - W G V >2 I R , DS D DS(on)max g Transconductance 47 94 - S fs I =83A D 3) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 2 2017-02-23