X-On Electronics has gained recognition as a prominent supplier of IPP114N12N3 G MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPP114N12N3 G MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPP114N12N3 G Infineon

IPP114N12N3 G electronic component of Infineon
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Part No.IPP114N12N3 G
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N-Channel 120V MOSFET
Datasheet: IPP114N12N3 G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.116 ea
Line Total: USD 2.12 
Availability - 484
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7
Ship by Thu. 21 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 6.4039
10 : USD 5.61
30 : USD 4.9268
100 : USD 4.4499
500 : USD 4.2305
1000 : USD 4.1311

484
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 2.116
10 : USD 1.2075
100 : USD 1.1259
500 : USD 0.9717
1000 : USD 0.9338

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IPP114N12N3 G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPP114N12N3 G and other electronic components in the MOSFETs category and beyond.

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IPP114N12N3 G TM OptiMOS 3 Power-Transistor Product Summary Features V 120 V DS N-channel, normal level R 11.4 m DS(on)max Excellent gate charge x R product (FOM) DS(on) I 75 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant halogen free 1) Qualified according to JEDEC for target application Ideal for high-frequency switching and synchronous rectification Type IPP114N12N3 G Package PG-TO220-3 Marking 114N12N Maximum ratinMaximum ratingsgs,, at at TT =2255 C,C, unless otherwise sunless otherwise specifiedpecified jj Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C 75 A D C T =100 C 53 C 2) I T =25 C 300 Pulsed drain current D,pulse C E Avalanche energy, single pulse I =75 A, R =25 120 mJ AS D GS 3) V 20 V Gate source voltage GS P T =25 C Power dissipation 136 W tot C Operating and storage temperature T , T -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 2) see figure 3 3) T =150C and duty cycle D=0.01 for V <-5V jmax gs Rev. 2.4Rev. 2.4 page 1page 1 2011-11-252011-11-25 IPP114N12N3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 1.1 K/W thJC R minimal footprint - - 62 thJA Thermal resistance, junction - ambient 4) -- 40 6 cm2 cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =1 mA Drain-source breakdown voltage 120 - - V (BR)DSS GS D V V =V , I =83 A Gate threshold voltage 234 GS(th) DS GS D V =100 V, V =0 V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25 C j V =100 V, V =0 V, DS GS - 10 100 T =125 C j I V =20 V, V =0 V Gate-source leakage current - 1 100 nA GSS GS DS R V =10 V, I =75 A Drain-source on-state resistance - 9.8 11.4 DS(on) GS D Gate resistance R - 1.5 - G V >2 I R , DS D DS(on)max Transconductance g 40 80 - S fs I =75 A D 4) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.4Rev. 2.4 page 2page 2 2011-11-252011-11-25

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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