MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R280CE Data Sheet Rev. 2.1 Final Power Management & Multimarket500V CoolMOS CE Power Transistor IPW50R280CE, IPP50R280CE TO-247 TO-220 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE series combines the experience of the leading SJ MOSFET supplier with high class innovation while representing a cost appealing alternative compared to standard MOSFETs in target applications. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Drain Extremely low switching and conduction losses make switching Pin 2 applications even more efficient, more compact, lighter and cooler. Gate Pin 1 Features Source Extremely low losses due to very low FOM Rdson*Qg and Eoss Pin 3 Very high commutation ruggedness Easy to use/drive Pb-free plating, Halogen free mold compound Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22) Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, LCD & PDP TV and Lighting. Table 1 Key Performance Parameters Parameter Value Unit V T 550 V DS j,max R 0.28 DS(on),max Q 32.6 nC g.typ I 42.9 A D,pulse Eoss 400V 3.2 J Body diode di/dt 500 A/s Type / Ordering Code Package Marking Related Links IPW50R280CE PG-TO 247 5R280CE see Appendix A IPP50R280CE PG-TO 220 Final Data Sheet 2 Rev. 2.1, 2014-06-06