MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket600VCoolMOC6PowerTransistor IPA60R190C6,IPB60R190C6 IPI60R190C6,IPP60R190C6 IPW60R190C6 1 Description CoolMO is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMO C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applicationsevenmoreefficient,morecompact,lighter,andcooler. Features Extremely low losses due to very low FOM Rdson*Qgand Eoss drain Very high commutation ruggedness pin 2 Easy to use/drive 1) JEDEC qualified, Pb-free plating, Halogenfree gate pin 1 Applications PFC stages, hard switching PWM stages and resonant switching source pin 3 PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 650 V DS j,max R 0.19 DS(on),max Q 63 nC g,typ I 59 A D,pulse E 400V 5.2 J oss Body diode di/dt 500 A/s Type /Ordering Code Package Marking Related Links IPW60R190C6 PG-TO247 IFX C6 Product Brief IPB60R190C6 PG-TO263 IFX C6 Portfolio IPI60R190C6 PG-TO262 6R190C6 IFX CoolMOS Webpage IPP60R190C6 PG-TO220 IFX Designtools IPA60R190C6 PG-TO220 FullPAK 1) J-STD20 and JESD22 Rev. 2.3 Page 2 2018-02-26