MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R280C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket- H6YYV BEc6-CY O F KX S Y =C4- D)/ 6- =C5- D)/ 6- =C=- D)/ 6- =CC- D)/ 6- 36=* 7&, /* % 0BM LEKNEJI =bb GILo f T eXib hg baTel gXV ab bZl Ybe Z ib gTZX cbjXe GIL Mf& WXf ZaXW TVVbeW aZ gb g X fhcXe haVg ba LD ce aV c X TaW c baXXeXW Ul CaY aXba MXV ab bZ Xf( =bb GILo =0 fXe Xf Vb U aXf g X XkcXe XaVX bY g X XTW aZ LD GIL M fhcc Xe j g Z V Tff aabiTg ba( M X bYYXeXW WXi VXf cebi WX T UXaXY gf bY T YTfg fj gV aZ LD GIL M j X abg fTVe Y V aZ XTfX bY hfX( kgeX X l bj fj gV aZ TaW VbaWhVg ba bffXf T X fj gV aZ Tcc VTg bafXiXa beXXYY V Xag& beXVb cTVg& Z gXe&TaWVbb Xe( 1B>NOLBM n kgeX X l bj bffXf WhX gb iXel bj IGKKXUT BNTaW UXX AL>EI n OXel Z Vb hgTg ba ehZZXWaXff ZSX) n Tfl gbhfX)We iX * >8786 dhT Y XW& JU YeXX c Tg aZ& BT bZXa YeXX D>NB ZSX( .KKGE >NEJIM J = fgTZXf& TeW fj gV aZ JPG fgTZXf TaW eXfbaTag fj gV aZ MJOL B ZSX * JPG fgTZXf Ybe X(Z( J= L iXeUbk& WTcgXe& F=> J>J MO& F Z g aZ& LXeiXe& MX XVb and NJL( (61-=1 89>1 9< & * + -<-6616583 >41 =1 92 21<<5>1 .1-0= 98 >41 3->1 9< =1 -<->1 >9>17 961= 5= 3181<-66 <1/97718010 FKLVO( >ObCO PY WKXMOCK KWO O 6>L>HBNBL <>GOB IEN 9 & /.) F 7D Q%SH % ) +1 7UT %SH -, T6 N%Y V -) 4 7%VZRXL 9 .**O -(1 rD UXX <bWl W bWX W)(K* .)) 4(aX FbZO&B NO SXQ6YNO CKMUKQO K USXQ DOVK ON SXU =AG/)C+1)6/ A &E +-0 C Q=0 JebWhVg <e XY =A5/)C+1)6/ A &E +/, = Q =0JbegYb b =A=/)C+1)6/ A &E +/+ /C+1)6/ C Q =bb GIL PXUcTZX =AA/)C+1)6/ A &E ++) C Q >Xf Za gbb f CJ 0*K,2*=0 JA MI,,* h J E + D LM>,* TaWD L>,, Rev. 2.3 Page 2 2018-02-26