X-On Electronics has gained recognition as a prominent supplier of IPP65R041CFD7XKSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPP65R041CFD7XKSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPP65R041CFD7XKSA1 Infineon

IPP65R041CFD7XKSA1 electronic component of Infineon
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Part No.IPP65R041CFD7XKSA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET HIGH POWER_NEW
Datasheet: IPP65R041CFD7XKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.5095 ea
Line Total: USD 7.51 
Availability - 460
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
460
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 7.5095
10 : USD 6.716
25 : USD 4.8185
100 : USD 4.715
500 : USD 4.623

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IPP65R041CFD7XKSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPP65R041CFD7XKSA1 and other electronic components in the MOSFETs category and beyond.

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IPP65R041CFD7 MOSFET PG-TO 220 650V CoolMOS CFD7 SJ Power Device tab The latest 650 V CoolMOS CFD7 extends the voltage class offering of the CFD7 family and is a successor to the 650 V CoolMOS CFD2. Resulting from improved switching performance and excellent thermal behavior, 650 V CooMOS CFD7 offers highest efficiency in resonant switching topologies, such as LLC and phase-shift-full-bridge (ZVS). As part of Infineons fast body diode portfolio, this new product series blends all advantages of a fast switching technology together with superior hard commutation robustness. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions. Features Drain Pin 2, Tab Ultra-fast body diode 650V break down voltage Best-in-class R DS(on) Gate Reduced switching losses Pin 1 Low RDS(on) dependency over temperature Source Pin 3 Benefits Excellent hard commutation ruggedness Extra safety margin for designs with increased bus voltage Enabling increased power density solutions Outstanding light load efficiency in industrial SMPS applications Improved full load efficiency in industrial SMPS applications Price competitiveness over previous CoolMOS families Potential applications Suitable for Soft Switching topologies Optimized for phase-shift full-bridge (ZVS), LLC Applications Server, Telecom, EV Charging, Solar Product validation Fully qualified according to JEDEC for Industrial Applications Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 700 V DS j,max RDS(on),max 41 m Q 102 nC g,typ I 211 A D,pulse E 400V 14.0 J oss Body diode di /dt 1300 A/s F Type / Ordering Code Package Marking Related Links IPP65R041CFD7 PG-TO220-3 65R041F7 see Appendix A Final Data Sheet 1 Rev. 2.1, 2020-08-12650V CoolMOS CFD7 SJ Power Device IPP65R041CFD7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.1, 2020-08-12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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