X-On Electronics has gained recognition as a prominent supplier of IPSA70R600P7SAKMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPSA70R600P7SAKMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPSA70R600P7SAKMA1 Infineon

IPSA70R600P7SAKMA1 electronic component of Infineon

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Part No.	IPSA70R600P7SAKMA1
Manufacturer:	Infineon
Category:	MOSFETs
Description:	CONSUMER High-performance 700V/600A IGBT module with embedded heat sink.
Datasheet:	IPSA70R600P7SAKMA1 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.0463 ea
Line Total: USD 1.05

Availability - 1455
Ship by Wed. 05 Mar to Fri. 07 Mar

MOQ: 1 Multiples: 1
Pack Size: 1

IPSA70R600P7SAKMA1 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

1455

Ship by Wed. 05 Mar to Fri. 07 Mar

MOQ : 1
Multiples : 1

1 : USD 1.0463
10 : USD 0.7075
100 : USD 0.4488
500 : USD 0.4037
1000 : USD 0.3608
1500 : USD 0.3289
4500 : USD 0.3289
10500 : USD 0.3256
24000 : USD 0.3157

Availability	Price	Buy Price	Quantity
1455 Ship by Wed. 05 Mar to Fri. 07 Mar MOQ : 1 Multiples : 1	1 : USD 1.0463 10 : USD 0.7075 100 : USD 0.4488 500 : USD 0.4037 1000 : USD 0.3608 1500 : USD 0.3289 4500 : USD 0.3289 10500 : USD 0.3256 24000 : USD 0.3157

Specifications

Manufacturer

Infineon Infineon

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

8.5 A 8.5 A

Vds - Drain-Source Breakdown Voltage

700 V 700 V

Rds On - Drain-Source Resistance

490 mOhms 490 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

2.5 V 2.5 V

Minimum Operating Temperature

- 40 C - 40 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

43.1 W 43.1 W

Mounting Style

Through Hole Through Hole

Package / Case

PG - TO - 251 - 3 PG - TO - 251 - 3

Packaging

Tube Tube

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

16 V 16 V

Qg - Gate Charge

10.5 nC 10.5 nC

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Transistor Type

1 N - Channel 1 N - Channel

Brand

Infineon Technologies Infineon Technologies

Fall Time

23 ns 23 ns

Product Type

Mosfet Mosfet

Rise Time

5.5 ns 5.5 ns

Factory Pack Quantity :

1500 1500

Subcategory

Mosfets Mosfets

Typical Turn-Off Delay Time

63 ns 63 ns

Typical Turn-On Delay Time

14 ns 14 ns

Cnhts

8541290000 8541290000

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Notes:- Show Stocked Products With Similar Attributes.

IPSA70R600P7SAKMA1 Alternative Parts

We are delighted to provide the IPSA70R600P7SAKMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPSA70R600P7SAKMA1 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The IPSA70R600P7SAKMA1 is a Power MOSFET transistor made by Infineon. It is a N-channel enhancement mode Field Effect Transistor (FET) with low on-state resistance and high switching speed. It is rated for operation at 70V, has a RDS(on) of 0.6 O, and can handle currents up to 8A. The maximum junction temperature is 175°C.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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