IPT059N15N3ATMA1 Infineon

IPT059N15N3 MOSFET HSOF OptiMOS 3 Power-Transistor , 150 V Features Tab N-channel, normal level Excellent gate charge x RDS(on) product (FOM) Very low on-resistance R DS(on) 1 175 C operating temperature 2 3 4 5 Pb-free lead plating RoHS compliant 6 7 1) 8 Qualified according to JEDEC for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Drain Table 1 Key Performance Parameters Tab Parameter Value Unit V 150 V DS Gate Pin 1 RDS(on),max 5.9 m Source Pin 2-8 I 155 A D Type / Ordering Code Package Marking Related Links IPT059N15N3 PG-HSOF-8 059N15N3 - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.2, 2017-05-16 OptiMOS 3 Power-Transistor, 150 V IPT059N15N3 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 3 Electrical characteristics diagrams . 5 Package Outlines 9 Revision History 10 Trademarks . 10 Disclaimer 10 Final Data Sheet 2 Rev. 2.2, 2017-05-16