IPT60R055CFD7 MOSFET HSOF 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power Tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the Tab successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge 1 2 (ZVS) and LLC. Resulting from reduced gate charge (Q ), best-in-class 3 8 g 4 7 5 6 6 7 5 reverse recovery charge (Q ) and improved turn off behavior CoolMOS rr 8 4 3 2 CFD7 offers highest efficiency in resonant topologies. As part of Infineons 1 fast body diode portfolio, this new product series blends all advantages of a fast switching technology together with superior hard commutation robustness, without sacrificing easy implementation in the design-in process. Drain Tab Features *1 Gate Ultra-fast body diode Pin 1 Low gate charge Driver Source Best-in-class reverse recovery charge (Q ) rr Source Pin 2 Pin 3-8 Improved MOSFET reverse diode dv/dt and di /dt ruggedness F *1: Internal body diode Lowest FOM RDS(on)*Qg and RDS(on) *Eoss Best-in-class R in SMD and THD packages DS(on) Benefits Excellent hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use / performance tradeoff Enabling increased power density solutions Potential applications Suitable for Soft Switching topologies Optimized for phase-shift full-bridge (ZVS), LLC Applications Server, Telecom, EV Charging Product validation Fully qualified according to JEDEC for Industrial Applications Please note: The source and sense source pins are not exchangeable. Their exchange might lead to malfunction. For paralleling 4pin MOSFET devices the placement of the gate resistor is generally recommended to be on the Driver Source instead of the Gate. Table 1 Key Performance Parameters Parameter Value Unit V T 650 V DS j,max R 55 m DS(on),max Q 67 nC g,typ ID,pulse 129 A E 400V 7.7 J oss Body diode di /dt 1300 A/s F Type / Ordering Code Package Marking Related Links IPT60R055CFD7 PG-HSOF-8 60R055F7 see Appendix A Final Data Sheet 1 Rev. 2.3, 2020-10-05600V CoolMOS CFD7 Power Transistor IPT60R055CFD7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.3, 2020-10-05