IPW60R045CPA CoolMOS Power Transistor Product Summary V 600 V DS R 0.045 DS(on),max Q 150 nC g,typ Features Worldwide best R in TO247 ds,on Ultra low gate charge PG-TO247-3 Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for: DC/DC converters for Automotive Applications Type Package Marking IPW60R045CPA PG-TO247-3 6R045A Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C 60 Continuous drain current A D C T =100 C 38 C 1) 230 I T =25 C Pulsed drain current D,pulse C I =11 A, V =50 V Avalanche energy, single pulse E 1950 mJ AS D DD 1),2) E I =11 A, V =50 V 3 Avalanche energy, repetitive t AR D DD AR 1),2) I 11 Avalanche current, repetitive t A AR AR MOSFET dv /dt ruggedness dv /dt V =0...480 V 50 V/ns DS V Gate source voltage static 20 V GS P T =25 C 431 Power dissipation W tot C Operating temperature T -40 ... 150 C j Storage temperature T -40 ... 150 stg Mounting torque M3 and M3.5 screws 60 Ncm Rev. 2.0 page 1 2010-02-15IPW60R045CPA Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I Continuous diode forward current 44 A S T =25 C C 1) I 230 Diode pulse current S,pulse 3) dv /dt 15 V/ns Reverse diode dv /dt Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 0.29 K/W thJC Thermal resistance, junction - R leaded - - 62 thJA ambient Soldering temperature, 1.6 mm (0.063 in.) T - - 260 C sold wavesoldering only allowed at leads from case for 10 s Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =250 A 600 - - V Drain-source breakdown voltage (BR)DSS GS D Gate threshold voltage V V =V , I =3 mA 2.5 3 3.5 GS(th) DS GS D V =600 V, V =0 V, DS GS Zero gate voltage drain current I - - 10 A DSS T =25 C j I V =20 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS V =10 V, I =44 A, GS D R Drain-source on-state resistance - 0.04 0.045 DS(on) T =25 C j V =10 V, I =44 A, GS D - 0.11 - T =150 C j R Gate resistance f =1 MHz, open drain - 1.3 - G Rev. 2.0 page 2 2010-02-15