MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPW65R070C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, de signed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. drain pin 2 Features gate Extremely low losses due to very low FOM Rdson*Qg and Eoss pin 1 Very high commutation ruggedness Easy to use/drive source 1) Qualified for industrial grade applications according to JEDEC pin 3 Pb-free plating, Halogen free mold compound Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, LCD & PDP TV, Lighting, Server, Telecom, UPS and Solar. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit Related Links V T 700 V IFX CoolMOS Webpage DS j,max R 0.07 IFX Design tools DS(on),max Q 170 nC g,typ I 150 A D,pulse E 400V 13 J oss Body diode di/dt 300 A/s Type Package Marking IPW65R070C6 PG-TO247 65C6070 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2011-03-15