X-On Electronics has gained recognition as a prominent supplier of IPW65R070C6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPW65R070C6 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPW65R070C6 Infineon

IPW65R070C6 electronic component of Infineon
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See Product Specifications
Part No.IPW65R070C6
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N-Ch 700V 53.5A TO247-3 CoolMOS C6
Datasheet: IPW65R070C6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.2575 ea
Line Total: USD 9.26 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 26.9061
10 : USD 23.8444
100 : USD 20.1381
500 : USD 18.0172

0
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 9.2575
10 : USD 8.073
25 : USD 7.3945
100 : USD 6.923
240 : USD 6.5895
480 : USD 6.2675
1200 : USD 5.796
2640 : USD 5.6925
5040 : USD 5.566

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
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Typical Turn-On Delay Time
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We are delighted to provide the IPW65R070C6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPW65R070C6 and other electronic components in the MOSFETs category and beyond.

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPW65R070C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, de signed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. drain pin 2 Features gate Extremely low losses due to very low FOM Rdson*Qg and Eoss pin 1 Very high commutation ruggedness Easy to use/drive source 1) Qualified for industrial grade applications according to JEDEC pin 3 Pb-free plating, Halogen free mold compound Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, LCD & PDP TV, Lighting, Server, Telecom, UPS and Solar. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit Related Links V T 700 V IFX CoolMOS Webpage DS j,max R 0.07 IFX Design tools DS(on),max Q 170 nC g,typ I 150 A D,pulse E 400V 13 J oss Body diode di/dt 300 A/s Type Package Marking IPW65R070C6 PG-TO247 65C6070 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2011-03-15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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