X-On Electronics has gained recognition as a prominent supplier of IPW65R420CFDFKSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPW65R420CFDFKSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPW65R420CFDFKSA1 Infineon

IPW65R420CFDFKSA1 electronic component of Infineon
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Part No.IPW65R420CFDFKSA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET LOW POWER_LEGACY
Datasheet: IPW65R420CFDFKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.71 ea
Line Total: USD 3.71 
Availability - 3
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 3.71
3 : USD 3.332
6 : USD 3.206
10 : USD 3.108
15 : USD 3.038

   
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We are delighted to provide the IPW65R420CFDFKSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPW65R420CFDFKSA1 and other electronic components in the MOSFETs category and beyond.

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IPW65R420CFDFKSA1 is a MOSFET Low Power_Legacy product manufactured by Infineon Technologies. It is a high-voltage MOSFET with an electrical breakdown voltage of 425V. It is designed to reduce power dissipation and improve reliability in applications such as DC-DC converters, power supplies, motor control and telecom power systems. This device has a typical RDS(on) of 3 mO and a maximum RDS(on) of 7 mO. It also has high switching speeds, low gate charge Qg, and low input capacitance. Its excellent long-term reliability makes it suitable for long life applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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