PD - 94965B IRF1010EPbF HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance V = 60V DSS Dynamic dv/dt Rating 175C Operating Temperature R = 12m DS(on) Fast Switching G Fully Avalanche Rated I = 84A Lead-Free D S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 84 D C GS I T = 100C Continuous Drain Current, V 10V 59 A D C GS I Pulsed Drain Current 330 DM P T = 25C Power Dissipation 200 W D C Linear Derating Factor 1.4 W/C V Gate-to-Source Voltage 20 V GS I Avalanche Current 50 A AR E Repetitive Avalanche Energy 17 mJ AR dv/dt Peak Diode Recovery dv/dt 4.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.75 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.064 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 12 m V = 10V, I = 50A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 69 S V = 25V, I = 50A fs DS D 25 V = 60V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 48V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 130 I = 50A g D Q Gate-to-Source Charge 28 nC V = 48V gs DS Q Gate-to-Drain Mille) Charge 44 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 12 V = 30V d(on) DD t Rise Time 78 I = 50A r D ns t Turn-Off Delay Time 48 R = 3.6 d(off) G t Fall Time 53 V = 10V, See Fig. 10 f GS D Between lead, L Internal Drain Inductance D 6mm (0.25in.) nH G from package L Internal Source Inductance S and center of die contact S C Input Capacitance 3210 V = 0V iss GS C Output Capacitance 690 V = 25V oss DS C Reverse Transfer Capacitance 140 pF = 1.0MHz, See Fig. 5 rss E Single Pulse Avalanche Energy 1180 320 mJ I = 50A, L = 260H AS AS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 84 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 330 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 50A, V = 0V SD J S GS t Reverse Recovery Time 73 110 ns T = 25C, I = 50A rr J F Q Reverse Recovery Charge 220 330 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Repetitive rating pulse width limited by Pulse width 400s duty cycle 2%. max. junction temperature. (See fig. 11) This is a typical value at device destruction and represents operation outside rated limits. Starting T = 25C, L = 260H J This is a calculated value limited to T = 175C . J R = 25 , I = 50A, V =10V (See Figure 12) G AS GS Calculated continuous current based on maximum allowable I 50A di/d 230A/s, V V , SD DD (BR)DSS junction temperature. Package limitation current is 75A. T 175C J 2 www.irf.com