PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D V = 60V 175C Operating Temperature DSS Fast Switching Repetitive Avalanche Allowed up to Tjmax R = 8.5m DS(on) Lead-Free G I = 75A D Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of 2 TO-220AB D Pak TO-262 applications. IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 84 A D C GS I T = 100C Continuous Drain Current, V 10V (See Fig. 9) 60 D C GS I T = 25C 10V (Package Limited) 75 D C Continuous Drain Current, V GS I 340 Pulsed Drain Current DM P T = 25C 140 W C Maximum Power Dissipation D Linear Derating Factor 0.90 W/C V 20 V Gate-to-Source Voltage GS E AS Single Pulse Avalanche Energy (Thermally Limited) 99 mJ E (tested) AS Single Pulse Avalanche Energy Tested Value 180 I AR Avalanche Current See Fig.12a,12b,15,16 A E AR Repetitive Avalanche Energy mJ T -55 to + 175 C J Operating Junction and T STG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R 1.11 C/W JC Junction-to-Case R 0.50 CS Case-to-Sink, Flat, Greased Surface R 62 JA Junction-to-Ambient R 40 JA Junction-to-Ambient (PCB Mount, steady state) HEXFET is a registered trademark of International Rectifier. www.irf.com 1 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage60 V V = 0V, I = 250A (BR)DSS GS D V / T DSS J Breakdown Voltage Temp. Coefficient 0.058 V/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 6.8 8.5 V = 10V, I = 51A m GS D V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 100A DS GS D gfs Forward Transconductance 200 S V = 25V, I = 51A DS D I Drain-to-Source Leakage Current 20 A V = 60V, V = 0V DSS DS GS 250 V = 60V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 20V GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 5886nC I = 51A g D Q gs Gate-to-Source Charge 19 28 V = 48V DS Q gd Gate-to-Drain Mille) Charge 21 32 V = 10V GS t d(on) Turn-On Delay Time 19 ns V = 30V DD t Rise Time 90 I = 51A r D t d(off) Turn-Off Delay Time 38 R = 7.95 G t f Fall Time 54 V = 10V GS L D D Internal Drain Inductance 4.5 nH Between lead, 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package S and center of die contact C iss Input Capacitance 2810 pF V = 0V GS C Output Capacitance 420 V = 25V oss DS C rss Reverse Transfer Capacitance 200 = 1.0MHz, See Fig. 5 C oss Output Capacitance 1440 V = 0V, V = 1.0V, = 1.0MHz GS DS C oss Output Capacitance 320 V = 0V, V = 48V, = 1.0MHz GS DS C eff. V = 0V, V = 0V to 48V oss Effective Output Capacitance 510 GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions I D S Continuous Source Current 84 MOSFET symbol showing the (Body Diode) A I G Pulsed Source Current 340 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage T = 25C, I = 51A, V = 0V SD 1.3 V J S GS t Reverse Recovery Time T = 25C, I = 51A, V = 30V rr 41 62 ns J F DD Q di/dt = 100A/s Reverse Recovery Charge 54 81 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on C eff. is a fixed capacitance that gives the same charging time Repetitive rating pulse width limited by oss max. junction temperature. (See fig. 11). as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.077mH, Jmax J Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive Jmax R = 25 , I = 51A, V =10V. Part not GS avalanche performance. G AS recommended for use above this value. This value determined from sample failure population. 100% I 51A, di/dt 260A/s, V V , SD DD (BR)DSS tested to this value in production. T 175C. 2 J This is applied to D Pak, when mounted on 1 square PCB Pulse width 1.0ms duty cycle 2%. ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note AN-994. 2 www.irf.com