IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF Applications HEXFET Power MOSFET High Efficiency Synchronous Rectification in D SMPS V 60V DSS Uninterruptible Power Supply R typ. 7.1m DS(on) High Speed Power Switching Hard Switched and High Frequency Circuits G max. 8.4m I 79A S D Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D D Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt S S S D D D Capability G G G 2 D Pak TO-220AB TO-262 IRF1018ESPbF IRF1018EPbF IRF1018ESLPbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 79 D C GS I T = 100C Continuous Drain Current, V 10V 56 D C GS A I Pulsed Drain Current 315 DM P T = 25C Maximum Power Dissipation 110 W D C Linear Derating Factor 0.76 W/C V Gate-to-Source Voltage 20 V GS Peak Diode Recovery 21 dv/dt V/ns T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG 300 Soldering Temperature, for 10 seconds (1.6mm from case) 10lb in (1.1N m) Mounting torque, 6-32 or M3 screw Avalanche Characteristics Single Pulse Avalanche Energy E 88 mJ AS (Thermally limited) Avalanche Current I 47 A AR Repetitive Avalanche Energy E 11 mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.32 JC R Case-to-Sink, Flat Greased Surface , TO-220 0.50 CS C/W R Junction-to-Ambient, TO-220 62 JA 2 R 40 JA Junction-to-Ambient (PCB Mount) , D Pak www.irf.com 1 2/28/08 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.073 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 7.1 8.4 V = 10V, I = 47A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 100 A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 60V, V = 0V DSS DS GS 250 V = 48V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 110 S V = 50V, I = 47A DS D Q Total Gate Charge 46 69 nC I = 47A g D Q Gate-to-Source Charge 10 V = 30V gs DS Q Gate-to-Drain Mille) Charge 12 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 34 I = 47A, V =0V, V = 10V sync g gd D DS GS R Internal Gate Resistance 0.73 G(int) t Turn-On Delay Time 13 ns V = 39V d(on) DD t Rise Time 35 I = 47A r D t Turn-Off Delay Time 55 R = 10 d(off) G t Fall Time 46 V = 10V f GS C Input Capacitance 2290 V = 0V iss GS C Output Capacitance 270 V = 50V oss DS C Reverse Transfer Capacitance 130 pF = 1.0MHz rss C eff. (ER) Effective Output Capacitance (Energy Related) 390 V = 0V, V = 0V to 60V oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 630 V = 0V, V = 0V to 60V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 79 A MOSFET symbol S D (Body Diode) showing the G I Pulsed Source Current 315 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 47A, V = 0V SD J S GS t Reverse Recovery Time 26 39 ns T = 25C V = 51V, rr J R 31 47 T = 125C I = 47A J F di/dt = 100A/ s Q Reverse Recovery Charge 24 36 nC T = 25C rr J T = 125C 35 53 J I T = 25C Reverse Recovery Current 1.8 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by max. junction C eff. (TR) is a fixed capacitance that gives the same charging time oss temperature. as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.08mH Jmax J C eff. (ER) is a fixed capacitance that gives the same energy as oss R = 25, I = 47A, V =10V. Part not recommended for GS G AS C while V is rising from 0 to 80% V . oss DS DSS use above this value. When mounted on 1 square PCB (FR-4 or G-10 Material). For recom I 47A, di/dt 1668A/s, V V , T 175C. mended footprint and soldering techniques refer to application note AN-994. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. R is measured at T approximately 90C. J This is only applied to TO-220 2 www.irf.com