IRF1324PbF HEXFET Power MOSFET Applications D V 24V DSS High Efficiency Synchronous Rectification in SMPS R typ. 1.2m Uninterruptible Power Supply DS(on) High Speed Power Switching max. 1.5m Hard Switched and High Frequency Circuits G I 353A D (Silicon Limited) I 195A S D (Package Limited) Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability S Lead-Free D G TO-220AB IRF1324PbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 353 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 249 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 195 D C GS I 1412 Pulsed Drain Current DM P T = 25C Maximum Power Dissipation 300 W D C Linear Derating Factor 2.0 W/C V 20 Gate-to-Source Voltage V GS dv/dt Peak Diode Recovery 0.46 V/ns T Operating Junction and J -55 to + 175 T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Avalanche Characteristics E Single Pulse Avalanche Energy 270 mJ AS (Thermally limited) I See Fig. 14, 15, 22a, 22b Avalanche Current A AR E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.50 JC C/W R Case-to-Sink, Flat Greased Surface 0.50 CS R Junction-to-Ambient 62 JA www.irf.com 1 09/24/09 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V V = 0V, I = 250A Drain-to-Source Breakdown Voltage 24 V (BR)DSS GS D Reference to 25C, I = 5.0mA V /T Breakdown Voltage Temp. Coefficient 22 mV/C D (BR)DSS J R V = 10V, I = 195A Static Drain-to-Source On-Resistance 1.2 1.5 m DS(on) GS D V = V , I = 250A V Gate Threshold Voltage 2.0 4.0 V DS GS D GS(th) V = 24V, V = 0V I Drain-to-Source Leakage Current 20 A DS GS DSS V = 24V, V = 0V, T = 125C 250 DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GS GSS V = -20V Gate-to-Source Reverse Leakage -200 GS R Internal Gate Resistance 2.3 G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V = 10V, I = 195A gfs Forward Transconductance 180 S DS D Q I = 195A Total Gate Charge 160 240 g D Q V = 12V Gate-to-Source Charge 84 gs DS nC Q V = 10V Gate-to-Drain Mille) Charge 49 gd GS Total Gate Charge Sync. (Q - Q ) I = 195A, V =0V, V = 10V Q 76 sync g gd D DS GS t V = 16V Turn-On Delay Time 17 d(on) DD I = 195A t Rise Time 190 D r ns t Turn-Off Delay Time 83 R = 2.7 d(off) G V = 10V t Fall Time 120 GS f C Input Capacitance 7590 V = 0V GS iss V = 24V C Output Capacitance 3440 DS oss C pF = 1.0 MHz, See Fig. 5 Reverse Transfer Capacitance 1960 rss C eff. (ER) V = 0V, V = 0V to 19V , See Fig. 11 Effective Output Capacitance (Energy Related) 4700 oss GS DS C eff. (TR) V = 0V, V = 0V to 19V Effective Output Capacitance (Time Related) 4490 oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I MOSFET symbol Continuous Source Current S 353 (Body Diode) showing the A G I integral reverse Pulsed Source Current SM 1412 S (Body Diode) p-n junction diode. T = 25C, I = 195A, V = 0V V Diode Forward Voltage 1.3 V J S GS SD t T = 25C V = 20V, Reverse Recovery Time 46 rr J R ns T = 125C I = 195A 71 J F Q T = 25C Reverse Recovery Charge 160 di/dt = 100A/s rr J nC T = 125C 430 J I T = 25C Reverse Recovery Current 7.7 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calcuted continuous current based on maximum allowable junction Pulse width 400s duty cycle 2%. temperature Bond wire current limit is 195A. Note that current C eff. (TR) is a fixed capacitance that gives the same charging time limitation arising from heating of the device leds may occur with oss some lead mounting arrangements. as C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction C eff. (ER) is a fixed capacitance that gives the same energy as oss temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.014mH Jmax J R = 25, I = 195A, V =10V. Part not recommended for use G AS GS above this value . I 195A, di/dt 450 A/s, V V , T 175C. SD DD (BR)DSS J 2 www.irf.com