StrongIRFET IRF135B203 IRF135S203 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D V 135V DSS Battery powered circuits Half-bridge and full-bridge topologies R typ. 6.7m DS(on) Synchronous rectifier applications G max 8.4m Resonant mode power supplies S OR-ing and redundant power switches I 129A D (Silicon Limited) DC/DC and AC/DC converters DC/AC Inverters D Benefits S D S Improved Gate, Avalanche and Dynamic dV/dt Ruggedness G G Fully Characterized Capacitance and Avalanche SOA TO-220AB 2 Enhanced body diode dV/dt and dI/dt Capability D -Pak IRF135B203 IRF135S203 Lead-Free, RoHS Compliant, Halogen-Free G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRF135B201 TO-220 Tube 50 IRF135B203 2 IRF135S201 D -Pak Tape and Reel 800 IRF135S203 28 140 I = 77A 26 D 120 24 22 100 20 18 80 16 T = 125C J 60 14 12 40 10 8 T = 25C J 20 6 4 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 1. Typical On Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback June 17, 2015 R , Drain-to -Source On Resistance (m ) DS(on) I , Drain Current (A) D IRF135B203/IRF135S203 Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 129 D C GS I T = 100C Continuous Drain Current, V 10V 91 A D C GS I Pulsed Drain Current 512 DM P T = 25C Maximum Power Dissipation 441 W D C Linear Derating Factor 2.9 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range STG C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Avalanche Characteristics E AS (Thermally limited) 595 Single Pulse Avalanche Energy mJ E AS (Thermally limited) 870 Single Pulse Avalanche Energy I Avalanche Current A AR See Fig 15, 15, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.34 JC R Case-to-Sink, Flat Greased Surface 0.50 CS C/W R Junction-to-Ambient 62 JA R Junction-to-Ambient (PCB Mount) 40 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 135 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.14 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 6.7 8.4 V = 10V, I = 77A m DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D 20 V =135 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 108V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.1 G Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 200H, R = 50 , I = 77A, V =10V. Jmax J G AS GS I 77A, di/dt 1700A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: