PD -95104 IRF1404SPbF IRF1404LPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175C Operating Temperature V = 40V DSS Fast Switching Fully Avalanche Rated R = 0.004 DS(on) G Lead-Free I = 162A Description D S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 2 The D Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- 2 resistance in any existing surface mount package. The D Pak TO-262 2 D Pak is suitable for high current applications because of IRF1404SPbF IRF1404LPbF its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1404L) is available for low- profile applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 162 D C GS I T = 100C Continuous Drain Current, V 10V 115 A D C GS I Pulsed Drain Current 650 DM P T = 25C Power Dissipation 3.8 W D A P T = 25C Power Dissipation 200 W D C Linear Derating Factor 1.3 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 519 mJ AS I Avalanche Current 95 A AR E Repetitive Avalanche Energy 20 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to +175 J T Storage Temperature Range -55 to +175 STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.75 C/W JC R Junction-to-Ambient (PCB mounted, steady-state)* 40 JA www.irf.com 1 03/11/04 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.036 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.00350.004 V = 10V, I = 95A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = 10V, I = 250A GS(th) DS D g Forward Transconductance 106 S V = 25V, I = 60A fs DS D 20 V = 40V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 32V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS nA Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 160 200 I = 95A g D Q Gate-to-Source Charge 35 nC V = 32V gs DS Q Gate-to-Drain Mille) Charge 42 60 V = 10V gd GS t Turn-On Delay Time 17 V = 20V d(on) DD t Rise Time 140 I = 95A r D t Turn-Off Delay Time 72 R = 2.5 d(off) G t Fall Time 26 R = 0.21 f D Between lead, L Internal Source Inductance nH S 7.5 and center of die contact C Input Capacitance 7360 V = 0V iss GS C Output Capacitance 1680 V = 25V oss DS C Reverse Transfer Capacitance 240 pF = 1.0MHz, See Fig. 5 rss C Output Capacitance 6630 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 1490 V = 0V, V = 32V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 1540 V = 0V, V = 0V to 32V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 162 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 650 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 95A, V = 0V SD J S GS t Reverse Recovery Time 71 110 ns T = 25C, I = 95A rr J F Q Reverse RecoveryCharge 180 270 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Repetitive rating pulse width limited by C eff. is a fixed capacitance that gives the same charging time oss max. junction temperature. (See fig. 11) as C while V is rising from 0 to 80% V oss DS DSS Starting T = 25C, L = 0.12mH J Calculated continuous current based on maximum allowable R = 25, I = 95A. (See Figure 12) G AS junction temperature. Package limitation current is 75A I 95A, di/dt 150A/s, V V , SD DD (BR)DSS Use IRF1404 data and test conditions. T 175C J Pulse width 300s duty cycle 2%. * When mounted on 1 square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note AN-994. 2 www.irf.com