PD - 96040C IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance 175C Operating Temperature V 40V (BR)DSS D Fast Switching R typ. 2.7m DS(on) Repetitive Avalanche Allowed up to Tjmax max. 3.7m Lead-Free G I 180A D (Silicon Limited) Description I 120A S This HEXFET Power MOSFET utilizes the latest D (Package Limited) processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device 2 for use in a wide variety of applications. TO-220AB D Pak TO-262 IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF Absolute Maximum Ratings Parameter Max. Units 180 I T = 25C Continuous Drain Current, V 10V (S ilicon Limited) D C GS 120 I T = 100C Continuous Drain Current, VGS 10V A D C (P ackage Limited) 120 I T = 25C Continuous Drain Current, V 10V D C GS Pulsed Drain Current I 710 DM P T = 25C Power Dissipation 200 W D C Linear Derating Factor 1.3 W/C V Gate-to-Source Voltage 20 V GS Single Pulse Avalanche Energy 330 mJ EAS (Thermally limited) Single Pulse Avalanche Energy Tested Value E (Tested ) 480 AS Avalanche Current I See Fig.12a, 12b, 15, 16 A AR Repetitive Avalanche Energy EAR mJ T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units 0.75 R Junction-to-Case JC R Case-to-Sink, Flat Greased Surface 0.50 CS C/W R Junction-to-Ambient 62 JA R Junction-to-Ambient (PCB Mount) 40 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.033 V/C Reference to 25C, I = 1mA (BR)DSS J D m ** RDS(on) Static Drain-to-Source On-Resistance 2.7 3.7 VGS = 10V, ID = 75A V Gate Threshold Voltage 2.0 4.0 V V = V , I = 150A GS(th) DS GS D gfs Forward Transconductance 170 V V = 25V, I = 75A** DS D I Drain-to-Source Leakage Current 20 A V = 40V, V = 0V DSS DS GS 250 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 VGS = -20V Q Total Gate Charge 100 150 I = 75A** g D Q Gate-to-Source Charge 31 nC V = 32V gs DS Qgd Gate-to-Drain Mille) Charge 42 VGS = 10V t Turn-On Delay Time 18 V = 20V d(on) DD t Rise Time 110 I = 75A** r D t Turn-Off Delay Time 36 ns R = 3.0 d(off) G t Fall Time 58 V = 10V f GS L Internal Drain Inductance 4.5 Between lead, D nH 6mm (0.25in.) L Internal Source Inductance 7.5 from package S and center of die contact C Input Capacitance 4340 V = 0V iss GS C Output Capacitance 1030 V = 25V oss DS C Reverse Transfer Capacitance 550 pF = 1.0MHz rss C Output Capacitance 3300 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 920 V = 0V, V = 32V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 1350 V = 0V, V = 0V to 32V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions 120 I Continuous Source Current MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 750 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 75A**,V = 0V SD J S GS t Reverse Recovery Time 28 42 ns T = 25C, I = 75A**, V = 20V rr J F DD di/dt = 100A/ s Q Reverse Recovery Charge 34 51 nC rr t Forward Turn-On Time Intrins ic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com