IRF1405SPbF IRF1405LPbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D V = 55V DSS Benefits Advanced Process Technology R = 5.3m DS(on) Ultra Low On-Resistance G Dynamic dv/dt Rating I = 131A D 175C Operating Temperature S Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Stripe Planar design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175C junction operating temperature, fast switching speed TO-262 2 D Pak and improved repetitive avalanche rating. These IRF1405LPbF IRF1405SPbF benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 131 D C GS I T = 100C Continuous Drain Current, V 10V 93 A D C GS I Pulsed Drain Current 680 DM P T = 25C Power Dissipation 200 W D C Linear Derating Factor 1.3 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 590 mJ AS I Avalanche Current See Fig.12a, 12b, 15, 16 A AR E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.75 C/W JC R Junction-to-Ambient (PCB mount) 40 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.057 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 4.6 5.3 m V = 10V, I = 101A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = 10V, I = 250A GS(th) DS D g Forward Transconductance 69 S V = 25V, I = 110A fs DS D 20 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 44V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 170 260 I = 101A g D Q Gate-to-Source Charge 44 66 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 62 93 V = 10V gd GS t Turn-On Delay Time 13 V = 38V d(on) DD t Rise Time 190 I = 110A r D ns t Turn-Off Delay Time 130 R = 1.1 d(off) G t Fall Time 110 V = 10V f GS D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 5480 V = 0V iss GS C Output Capacitance 1210 pF V = 25V oss DS C Reverse Transfer Capacitance 280 = 1.0MHz, See Fig. 5 rss C Output Capacitance 5210 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 900 V = 0V, V = 44V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 1500 V = 0V, V = 0V to 44V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 131 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 680 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 101A, V = 0V SD J S GS t Reverse Recovery Time 88 130 ns T = 25C, I = 101A rr J F Q Reverse RecoveryCharge 250 380 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D 2 www.irf.com