PD - 97018A IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175C Operating Temperature V = 55V DSS Fast Switching Repetitive Avalanche Allowed up to Tjmax R = 4.9m Lead-Free DS(on) G I = 75A D Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of 2 TO-220AB D Pak TO-262 applications. IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF Absolute Maximum Ratings Parameter Max. Units I T = 25C 150 Continuous Drain Current, V 10V (Silicon Limited) D C GS I T = 100C 110 A D C Continuous Drain Current, V 10V GS I T = 25C 75 D C Continuous Drain Current, V 10V (Package Limited) GS I 600 Pulsed Drain Current DM P T = 25C 230 W D C Power Dissipation Linear Derating Factor 1.5 W/C V 20 V GS Gate-to-Source Voltage E 270 mJ AS (Thermally limited) Single Pulse Avalanche Energy E (Tested ) 420 AS Single Pulse Avalanche Energy Tested Value I AR See Fig.12a, 12b, 15, 16 A Avalanche Current E AR mJ Repetitive Avalanche Energy T -55 to + 175 J Operating Junction and T C Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.65 JC R CS Case-to-Sink, Flat, Greased Surface 0.50 C/W R Junction-to-Ambient 62 JA R 40 JA Junction-to-Ambient (PCB Mount, steady state) HEXFET is a registered trademark of International Rectifier. www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A GS D / V T Breakdown Voltage Temp. Coefficient 0.049 V/C Reference to 25C, I = 1mA (BR)DSS J D R m DS(on) Static Drain-to-Source On-Resistance 3.7 4.9 V = 10V, I = 75A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Transconductance 88 S V = 25V, I = 75A DS D I Drain-to-Source Leakage Current 20 A V = 55V, V = 0V DSS DS GS 250 V = 55V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 120 180 I = 75A g D Q gs Gate-to-Source Charge 31 nC V = 44V DS Q gd Gate-to-Drain Mille) Charge 46 V = 10V GS t d(on) Turn-On Delay Time 18 V = 25V DD t r Rise Time 110 I = 75A D t d(off) Turn-Off Delay Time 48 ns R = 4.4 G t f Fall Time 82 V = 10V GS L D D Internal Drain Inductance 4.5 Between lead, nH 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package S and center of die contact C iss Input Capacitance 4780 V = 0V GS C oss Output Capacitance 770 V = 25V DS C rss Reverse Transfer Capacitance 410 pF = 1.0MHz C oss Output Capacitance 2730 V = 0V, V = 1.0V, = 1.0MHz GS DS C Output Capacitance 600 V = 0V, V = 44V, = 1.0MHz oss GS DS C eff. oss Effective Output Capacitance 910 V = 0V, V = 0V to 44V GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 75 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 600 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 75A, V = 0V SD J S GS t Reverse Recovery Time 30 46 ns T = 25C, I = 75A, V = 25V rr J F DD di/dt = 100A/s Q Reverse Recovery Charge 30 45 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by Limited by T , see Fig.12a, 12b, 15, 16 for typical Jmax max. junction temperature. (See fig. 11). repetitive avalanche performance. Limited by T , starting T = 25C, L = 0.10mH Jmax J This value determined from sample failure population. R = 25 , I = 75A, V =10V. Part not G AS GS 100% tested to this value in production. recommended for use above this value. 2 This is applied to D Pak, when mounted on 1 square PCB Pulse width 1.0ms duty cycle 2%. ( FR-4 or G-10 Material ). For recommended footprint and C eff. is a fixed capacitance that gives the same oss soldering techniques refer to application note AN-994. charging time as C while V is rising from 0 to 80% oss DS V . DSS 2 www.irf.com