X-On Electronics has gained recognition as a prominent supplier of IRF200B211 MOSFET across the USA, India, Europe, Australia, and various other global locations. IRF200B211 MOSFET are a product manufactured by Infineon. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

IRF200B211 Infineon

Hot IRF200B211 electronic component of Infineon
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See Product Specifications
Part No.IRF200B211
Manufacturer: Infineon
Category: MOSFET
Description: 200V 12A 80W 170mO@10V,7.2A N Channel TO-220AB-3 MOSFETs ROHS
Solid state relay optimized for industrial applications with a high load current switching capacity of 20A.
Datasheet: IRF200B211 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

65: USD 0.6467 ea
Line Total: USD 42.04

Availability - 2902
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ: 65  Multiples: 1
Pack Size: 1
Availability Price Quantity
275
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 1
Multiples : 1
1 : USD 0.9764
10 : USD 0.8658
100 : USD 0.7923
500 : USD 0.7545
1000 : USD 0.703
2000 : USD 0.6689
10000 : USD 0.6493

2280
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 1.173
10 : USD 0.9338
100 : USD 0.8119
500 : USD 0.774
1000 : USD 0.6774
2000 : USD 0.6647
10000 : USD 0.6394
25000 : USD 0.6348

2902
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 65
Multiples : 1
65 : USD 0.6467
100 : USD 0.6012
200 : USD 0.5997

275
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 13
Multiples : 1
13 : USD 0.8658
100 : USD 0.7923
500 : USD 0.7545
1000 : USD 0.703
2000 : USD 0.6689
10000 : USD 0.6493

1478
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 69
Multiples : 1
69 : USD 1.6245
100 : USD 1.5518
250 : USD 1.4895
500 : USD 1.4359
1000 : USD 1.3889

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
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We are delighted to provide the IRF200B211 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF200B211 and other electronic components in the MOSFET category and beyond.

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The IRF200B211 is a one of the components in Infineon's family of black Silicon Field Effect Transistors (SiFETs). It is a vertical-channeling N-Channel enhancement-mode MOSFET with a low on-resistance and typical gate threshold voltage of 1.1 V. This component is particularly suited for switching applications in low voltage and medium power consumption applications, such as motor control, consumer applications, automotive, and industrial applications. It has a drain current of 75A and drain-source breakdown voltage of 200V. It operates at a junction temperature range of -55°C to 150°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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