IRF2204SPbF Typical Applications IRF2204LPbF Industrial Motor Drive HEXFET Power MOSFET D Features V = 40V DSS Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating R = 3.6m DS(on) G 175C Operating Temperature Fast Switching I = 170A D Repetitive Avalanche Allowed up to Tjmax S Lead-Free Description This HEXFET Power MOSFET utilizes the lastest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make 2 D Pak TO-262 this design an extremely efficient and reliable device IRF2204SPbF IRF2204LPbF for use in a wide variety of applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 170 D C GS I T = 100C Continuous Drain Current, V 10V 120 A D C GS I Pulsed Drain Current 850 DM P T = 25C Power Dissipation 200 W D C Linear Derating Factor 1.3 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 460 mJ AS I Avalanche Current See Fig.12a, 12b, 15, 16 A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.75 JC C/W R Junction-to-Ambient 40 JA www.irf.com 1 IRF2204S/LPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.041 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 3.0 3.6 m V = 10V, I = 130A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = 10V, I = 250A GS(th) DS D g Forward Transconductance 120 S V = 10V, I = 130A fs DS D 20 V = 40V, V = 0V DS GS I Drain-to-Source Leakage Current DSS A 250 V = 32V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 130 200 I = 130A g D Q Gate-to-Source Charge 35 52 nC V = 32V gs DS Q Gate-to-Drain Mille) Charge 39 59 V = 10V gd GS t Turn-On Delay Time 15 V = 20V d(on) DD t Rise Time 140 I = 130A r D ns t Turn-Off Delay Time 62 R = 2.5 d(off) G t Fall Time 110 V = 10V f GS D Between lead, L Internal Drain Inductance D 6mm (0.25in.) nH G from package L Internal Source Inductance S and center of die contact S C Input Capacitance 5890 V = 0V iss GS C Output Capacitance 1570 pF V = 25V oss DS C Reverse Transfer Capacitance 130 = 1.0MHz, See Fig. 5 rss C Output Capacitance 8000 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 1370 V = 0V, V = 32V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 2380 V = 0V, V = 0V to 32V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 170 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 850 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 130A, V = 0V SD J S GS t Reverse Recovery Time 68 100 ns T = 25C, I = 130A rr J F Q Reverse RecoveryCharge 120 180 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D 2 www.irf.com