PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766 HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE (TO-204AA/AE) REF:MIL-PRF-19500/543 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF250 200V 0.085 30A The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. TO-3 The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state resis- tance combined with high transconductance superior re- verse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well estab- Features: lished advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature Repetitive Avalanche Ratings stability of the electrical parameters. Dynamic dv/dt Rating Hermetically Sealed They are well suited for applications such as switching Simple Drive Requirements power supplies, motor controls, inverters, choppers, audio Ease of Paralleling amplifiers and high energy pulse circuits. Absolute Maximum Ratings Parameter Units I V = 10V, T = 25C Continuous Drain Current 30 D GS C A I V = 10V, T = 100C Continuous Drain Current 19 D GS C I Pulsed Drain Current 120 DM P T = 25C Max. Power Dissipation 150 W D C Linear Derating Factor 1.2 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 500 mJ AS I Avalanche Current 30 A AR E Repetitive Avalanche Energy 15 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction -55 to 150 J o T Storage Temperature Range C STG Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 11.5 (typical) g For footnotes refer to the last page www.irf.com 1 01/22/01IRF250 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 1.0mA DSS GS D BV / T Temperature Coefficient of Breakdown 0.29 V/C Reference to 25C, I = 1.0mA DSS J D Voltage R Static Drain-to-Source On-State 0.085 V = 10V, I =19A DS(on) GS D Resistance 0.090 V =10V, I =30A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I =250A GS(th) DS GS D g Forward Transconductance 9.0 S ( ) V > 15V, I =19A fs DS DS I Zero Gate Voltage Drain Current 25 V =160V, V =0V DSS DS GS A 250 V =160V DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward 100 V =20V GSS GS nA I Gate-to-Source Leakage Reverse -100 V =-20V GSS GS Q Total Gate Charge 55 115 V =10V, ID 30A g GS = Q Gate-to-Source Charge 8 22 nC V =100V gs DS Q Gate-to-Drain (Miller) Charge 30 60 gd t Turn-On Delay Time 35 V =100V, I =30A, d(on) DD D t Rise Time 190 R =2.35 r G ns t Turn-Off Delay Time 170 d(off) t Fall Time 130 f L L Total Inductance 6.1 nH S + D Measured from the center of drain pad to center of source pad C Input Capacitance 3500 V = 0V, V =25V iss GS DS C Output Capacitance 700 pF f = 1.0MHz oss C Reverse Transfer Capacitance 110 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) 30 S A I Pulse Source Current (Body Diode) 120 SM V Diode Forward Voltage 1.9 V T = 25C, I =30A, V = 0V j SD S GS t Reverse Recovery Time 950 nS Tj = 25C, I = 30A, di/dt 100A/ s rr F Q Reverse Recovery Charge 9.0 c V 50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction to Case 0.83 thJC C/W R Junction to Ambient 30 Typical socket mount thJA For footnotes refer to the last page 2 www.irf.com