PD - 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175C Operating Temperature V = 40V DSS Fast Switching Repetitive Avalanche Allowed up to Tjmax R = 2.0m DS(on) Lead-Free G I = 75A S Description D This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other 2 TO-220AB D Pak TO-262 applications. IRF2804PbF IRF2804SPbF IRF2804LPbF Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 270 A D C GS I T = 100C Continuous Drain Current, V 10V (See Fig. 9) 190 D C GS I T = 25C (Package Limited) 75 C Continuous Drain Current, V 10V D GS I 1080 DM Pulsed Drain Current P T = 25C Maximum Power Dissipation 300 W C D Linear Derating Factor 2.0 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 540 mJ AS Single Pulse Avalanche Energy Tested Value E (tested) AS 1160 Avalanche Current I AR See Fig.12a,12b,15,16 A Repetitive Avalanche Energy E mJ AR T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R JC Junction-to-Case C/W 0.50 Case-to-Sink, Flat, Greased Surface R CS 0.50 R Junction-to-Ambient 62 JA R JA 40 Junction-to-Ambient (PCB Mount, steady state) HEXFET is a registered trademark of International Rectifier. www.irf.com 1 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage40 V V = 0V, I = 250A GS D V /T Breakdown Voltage Temp. Coefficient 0.031 V/C Reference to 25C, I = 1mA DSS J D R SMD DS(on) Static Drain-to-Source On-Resistance 1.5 2.0 V = 10V, I = 75A GS D m R TO-220 DS(on) Static Drain-to-Source On-Resistance 1.8 2.3 V = 10V, I = 75A GS D V Gate Threshold Voltage2.04.0V V = V , I = 250A GS(th) DS GS D gfs Forward Transconductance 130 S V = 10V, I = 75A DS D I DSS Drain-to-Source Leakage Current 20 A V = 40V, V = 0V DS GS 250 V = 40V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 20V GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 160240nC I = 75A g D Q gs Gate-to-Source Charge 41 62 V = 32V DS Q gd Gate-to-Drain Mille) Charge 66 99 V = 10V GS t Turn-On Delay Time 13 ns V = 20V d(on) DD t r Rise Time 120 I = 75A D t Turn-Off Delay Time 130 R = 2.5 d(off) G t f Fall Time 130 V = 10V GS L D D Internal Drain Inductance 4.5 nH Between lead, 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package S and center of die contact C Input Capacitance 6450 pF V = 0V iss GS C oss Output Capacitance 1690 V = 25V DS C Reverse Transfer Capacitance 840 = 1.0MHz, See Fig. 5 rss C oss Output Capacitance 5350 V = 0V, V = 1.0V, = 1.0MHz GS DS C oss Output Capacitance 1520 V = 0V, V = 32V, = 1.0MHz GS DS C eff. oss Effective Output Capacitance 2210 V = 0V, V = 0V to 32V GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions I D S Continuous Source Current 270 MOSFET symbol (Body Diode) A showing the I G Pulsed Source Current 1080 integral reverse SM S (Body Diode) p-n junction diode. V T = 25C, I = 75A, V = 0V Diode Forward Voltage 1.3 V SD J S GS t Reverse Recovery Time T = 25C, I = 75A, V = 20V rr 5684ns DD J F Q di/dt = 100A/s rr Reverse Recovery Charge 67 100 nC t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive Jmax max. junction temperature. (See fig. 11). avalanche performance. Limited by T , starting T = 25C, Jmax J This value determined from sample failure population. 100% L=0.24mH, R = 25, I = 75A, V =10V. GS G AS tested to this value in production. 2 Part not recommended for use above this value. This is applied to D Pak, when mounted on 1 square PCB I 75A, di/dt 220A/s, V V , SD DD (BR)DSS ( FR-4 or G-10 Material ). For recommended footprint and T 175C. J soldering techniques refer to application note AN-994. 2 Pulse width 1.0ms duty cycle 2%. Max R for D Pak and TO-262 (SMD) devices. DS(on) C eff. is a fixed capacitance that gives the same oss TO-220 device will have an Rth value of 0.45C/W. charging time as C while V is rising from 0 to 80% oss DS V . DSS 2 www.irf.com