PD - 95493A IRF2805PbF HEXFET Power MOSFET Typical Applications Industrial Motor Drive D V = 55V DSS Features Advanced Process Technology R = 4.7m DS(on) G Ultra Low On-Resistance 175C Operating Temperature I = 75A D Fast Switching S Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use TO-220AB in a wide variety of applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon limited) 175 D C GS I T = 100C Continuous Drain Current, V 10V (See Fig.9) 120 A D C GS I T = 25C Continuous Drain Current, V 10V (Package limited) 75 D C GS I Pulsed Drain Current 700 DM P T = 25C Power Dissipation 330 W D C Linear Derating Factor 2.2 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 450 mJ AS E (6 sigma) Single Pulse Avalanche Energy Tested Value 1220 AS I Avalanche Current See Fig.12a, 12b, 15, 16 A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) Nm (lbfin) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.45 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA HEXFET(R) is a registered trademark of International Rectifier. www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.06 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 3.9 4.7 m V = 10V, I = 104A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = 10V, I = 250A GS(th) DS D g Forward Transconductance 91 S V = 25V, I = 104A fs DS D 20 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 55V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 150 230 I = 104A g D Q Gate-to-Source Charge 38 57 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 52 78 V = 10V gd GS t Turn-On Delay Time 14 V = 28V d(on) DD t Rise Time 120 I = 104A r D ns t Turn-Off Delay Time 68 R = 2.5 d(off) G t Fall Time 110 V = 10V f GS D Between lead, 4.5 L Internal Drain Inductance D 6mm (0.25in.) nH G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 5110 V = 0V iss GS C Output Capacitance 1190 pF V = 25V oss DS C Reverse Transfer Capacitance 210 = 1.0MHz, See Fig. 5 rss C Output Capacitance 6470 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 860 V = 0V, V = 44V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 1600 V = 0V, V = 0V to 44V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 175 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 700 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 104A, V = 0V SD J S GS t Reverse Recovery Time 80 120 ns T = 25C, I = 104A rr J F Q Reverse Recovery Charge 290 430 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D C eff. is a fixed capacitance that gives the same charging time oss Repetitive rating pulse width limited by as C while V is rising from 0 to 80% V . oss DS DSS max. junction temperature. (See fig. 11). Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive Jmax Starting T = 25C, L = 0.08mH J avalanche performance. R = 25 , I = 104A. (See Figure 12). G AS This value determined from sample failure population. 100% I 104A, di/dt 240A/s, V V , SD DD (BR)DSS tested to this value in production. T 175C J Pulse width 400s duty cycle 2%. 2 www.irf.com