PD - 95945 IRF2807SPbF IRF2807LPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D Dynamic dv/dt Rating V = 75V DSS 175C Operating Temperature Fast Switching R = 13m DS(on) Fully Avalanche Rated G Lead-Free I = 82A D Description S Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 2 The D Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any 2 existing surface mount package. The D Pak is suitable for high current applications because of its low internal connection 2 D Pak TO-262 resistance and can dissipate up to 2.0W in a typical surface IRF2807SPbF IRF2807LPbF mount application. The through-hole version (IRF2807L) is available for low- profile applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 82 D C GS I T = 100C Continuous Drain Current, V 10V 58 A D C GS I Pulsed Drain Current 280 DM P T = 25C Power Dissipation 230 W D C Linear Derating Factor 1.5 W/C V Gate-to-Source Voltage 20 V GS I Avalanche Current 43 A AR E Repetitive Avalanche Energy 23 mJ AR dv/dt Peak Diode Recovery dv/dt 5.9 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.75 JC C/W R Junction-to-Ambient (PCB mount)** 40 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.074 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 13 m V = 10V, I = 43A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 38 S V = 50V, I = 43A fs DS D 25 V = 75V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 60V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 160 I = 43A g D Q Gate-to-Source Charge 29 nC V = 60V gs DS Q Gate-to-Drain Mille) Charge 55 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 13 V = 38V d(on) DD t Rise Time 64 I = 43A r D ns t Turn-Off Delay Time 49 R = 2.5 d(off) G t Fall Time 48 V = 10V, See Fig. 10 f GS D Between lead, L Internal Drain Inductance D 6mm (0.25in.) nH G from package L Internal Source Inductance S and center of die contact S C Input Capacitance 3820 V = 0V iss GS C Output Capacitance 610 V = 25V oss DS C Reverse Transfer Capacitance 130 pF = 1.0MHz, See Fig. 5 rss E Single Pulse Avalanche Energy 1280 340 mJ I = 50A, L = 370H AS AS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 82 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 280 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.2 V T = 25C, I = 43A, V = 0V SD J S GS t Reverse Recovery Time 100 150 ns T = 25C, I = 43A rr J F Q Reverse Recovery Charge 410 610 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Repetitive rating pulse width limited by This is a typical value at device destruction and represents max. junction temperature. (See fig. 11) operation outside rated limits. Starting T = 25C, L = 370H J This is a calculated value limited to T = 175C . J R = 25, I = 43A, V =10V (See Figure 12) G AS GS Calculated continuous current based on maximum allowable I 43A di/d 300A/s, V V , SD DD (BR)DSS junction temperature. Package limitation current is 75A. T 175C J **When mounted on 1 square PCB (FR-4 or G-10 Material). For Pulse width 400s duty cycle 2%. recommended footprint and soldering techniques refer to application note AN-994 2 www.irf.com