PD - 95488A IRF2807ZPbF IRF2807ZSPbF Features IRF2807ZLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175C Operating Temperature V = 75V DSS Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free R = 9.4m DS(on) G I = 75A Description D S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of 2 applications. TO-220AB D Pak TO-262 IRF2807ZPbF IRF2807ZSPbF IRF2807ZLPbF Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 89 A D C GS I T = 100C Continuous Drain Current, V 10V (See Fig. 9) 63 D C GS I T = 25C Continuous Drain Current, V 10V (Package Limited) 75 D C GS I 350 Pulsed Drain Current DM P T = 25C Maximum Power Dissipation 170 W C D Linear Derating Factor 1.1 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 160 mJ AS Single Pulse Avalanche Energy Tested Value E (tested) 200 AS Avalanche Current I AR See Fig.12a,12b,15,16 A Repetitive Avalanche Energy E AR mJ T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.90 C/W JC Case-to-Sink, Flat, Greased Surface R 0.50 CS R Junction-to-Ambient 62 JA R 40 JA Junction-to-Ambient (PCB Mount, steady state) HEXFET is a registered trademark of International Rectifier. www.irf.com 1 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage75 V V = 0V, I = 250A (BR)DSS GS D V / T DSS J Breakdown Voltage Temp. Coefficient 0.073 V/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 7.5 9.4 V = 10V, I = 53A m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Transconductance 67 S V = 25V, I = 53A DS D I DSS Drain-to-Source Leakage Current 20 A V = 75V, V = 0V DS GS 250 V = 75V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage-200 V = -20V GS Q g Total Gate Charge 71110nC I = 53A D Q gs Gate-to-Source Charge 19 29 V = 60V DS Q Gate-to-Drain Mille) Charge 28 42 V = 10V gd GS t Turn-On Delay Time 18 ns V = 38V d(on) DD t r Rise Time 79 I = 53A D t d(off) Turn-Off Delay Time 40 R = 6.2 G t f Fall Time 45 V = 10V GS L Internal Drain Inductance 4.5 nH Between lead, D D 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package and center of die contact S C Input Capacitance 3270 pF V = 0V iss GS C Output Capacitance 420 V = 25V oss DS C rss Reverse Transfer Capacitance 240 = 1.0MHz, See Fig. 5 C oss Output Capacitance 1590 V = 0V, V = 1.0V, = 1.0MHz GS DS C Output Capacitance 280 V = 0V, V = 60V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 440 V = 0V, V = 0V to 60V oss GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current 89 MOSFET symbol S (Body Diode) A showing the I G SM Pulsed Source Current 350 integral reverse S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 53A, V = 0V SD J S GS t T = 25C, I = 53A, V = 25V Reverse Recovery Time 4669ns rr J F DD Q di/dt = 100A/s rr Reverse Recovery Charge80120nC t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating pulse width limited by C eff. is a fixed capacitance that gives the same charging time oss max. junction temperature. (See fig. 11). as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.12mH, Jmax J Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive Jmax R = 25 , I = 53A, V =10V. Part not G AS GS avalanche performance. recommended for use above this value. This value determined from sample failure population. 100% I 53A, di/dt 420A/s, V V , SD DD (BR)DSS tested to this value in production. T 175C. 2 J This is applied to D Pak, when mounted on 1 square PCB Pulse width 1.0ms duty cycle 2%. ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note AN-994. 2 www.irf.com