PD -96097A IRF2903ZPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance V = 30V DSS 175C Operating Temperature Fast Switching R = 2.4m DS(on) G Repetitive Avalanche Allowed up to Tjmax Lead-Free I = 75A D S Description D This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features S of this design are a 175C junction operating D temperature, fast switching speed and improved G repetitive avalanche rating. These features combine TO-220AB to make this design an extremely efficient and IRF2903ZPbF reliable device for use in a wide variety of applications. GD S Gate Drain Source Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, V 10V (Silicon Limited) 260 I T = 25C GS D C (Silicon Limited) I T = 100C Continuous Drain Current, V 10V 180 GS A D C Continuous Drain Current, V 10V (Package Limited) 75 I T = 25C D C GS I Pulsed Drain Current 1020 DM 290 P T = 25C Power Dissipation W D C 2.0 Linear Derating Factor W/C V Gate-to-Source Voltage 20 V GS E 290 Single Pulse Avalanche Energy AS (Thermally limited) mJ E (Tested ) Single Pulse Avalanche Energy Tested Value 820 AS I Avalanche Current See Fig.12a, 12b, 15, 16 AR A E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG 300 (1.6mm from case ) Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.51 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250A V Drain-to-Source Breakdown Voltage 30 V (BR)DSS GS D / T Reference to 25C, I = 1mA V Breakdown Voltage Temp. Coefficient 0.021 V/C D (BR)DSS J R Static Drain-to-Source On-Resistance 1.9 2.4 m V = 10V, I = 75A DS(on) GS D V = V , I = 150A V Gate Threshold Voltage 2.0 4.0 V DS GS D GS(th) V = 10V, I = 75A gfs Forward Transconductance 120 S DS D V = 30V, V = 0V I Drain-to-Source Leakage Current 20 A DSS DS GS V = 30V, V = 0V, T = 125C 250 DS GS J V = 20V I Gate-to-Source Forward Leakage 200 nA GSS GS V = -20V Gate-to-Source Reverse Leakage -200 GS I = 75A Q Total Gate Charge 160 240 g D Q V = 24V Gate-to-Source Charge 51 nC DS gs V = 10V Q Gate-to-Drain Mille) Charge 58 gd GS t V = 15V Turn-On Delay Time 24 DD d(on) I = 75A t Rise Time 100 r D t R = 3.2 Turn-Off Delay Time 48 ns G d(off) V = 10V t Fall Time 37 f GS L Internal Drain Inductance 4.5 Between lead, D nH 6mm (0.25in.) L Internal Source Inductance 7.5 from package S and center of die contact C V = 0V Input Capacitance 6320 GS iss V = 25V C Output Capacitance 1980 oss DS C = 1.0MHz Reverse Transfer Capacitance 1100 pF rss V = 0V, V = 1.0V, = 1.0MHz C Output Capacitance 5930 oss GS DS C V = 0V, V = 24V, = 1.0MHz Output Capacitance 2010 GS DS oss = 0V, V = 0V to 24V C eff. Effective Output Capacitance 3050 V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 75 MOSFET symbol S showing the (Body Diode) A I Pulsed Source Current 1020 integral reverse SM p-n junction diode. (Body Diode) V Diode Forward Voltage 1.3 V T = 25C, I = 75A, V = 0V SD J S GS T = 25C, I = 75A, V = 15V t Reverse Recovery Time 34 51 ns J F DD rr Q Reverse Recovery Charge 29 44 nC di/dt = 100A/s rr Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) t Forward Turn-On Time on Repetitive rating pulse width limited by max. junction Limited by T , see Fig.12a, 12b, 15, 16 for typical Jmax temperature. (See fig. 11). repetitive avalanche performance. Limited by T , starting T = 25C, L = 0.10mH R = 25 , Jmax J G This value determined from sample failure population. 100% I = 75A, VGS =10V. Part not recommended for use above AS tested to this value in production. this value. This is only applied to TO-220AB pakcage. Pulse width 1.0ms duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time oss as C while V is rising from 0 to 80% V . oss DS DSS 2 www.irf.com