PD - 95494A IRF3007SPbF IRF3007LPbF Typical Applications Industrial Motor Drive HEXFET Power MOSFET Features D V = 75V DSS Ultra Low On-Resistance 175C Operating Temperature Fast Switching R = 0.0126 DS(on) G Repetitive Avalanche Allowed up to Tjmax Lead-Free I = 62A D S Description This design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 2 D Pak TO-262 IRF3007SPbF IRF3007LPbF Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 62 D C GS I T = 100C Continuous Drain Current, V 10V 44 A D C GS I Pulsed Drain Current 320 DM P T = 25C Power Dissipation 120 W D C Linear Derating Factor 0.8 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 290 mJ AS E (6 sigma) Single Pulse Avalanche Energy Tested Value 946 AS I Avalanche Current See Fig.12a, 12b, 15, 16 A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.25 C/W JC R Junction-to-Ambient (PCB Mounted,steady state)** 62 JA 2 ** This is applied to D Pak, when mounted on 1 square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note AN-994. www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.084 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 10.5 12.6 m V = 10V, I = 48A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = 10V, I = 250A GS(th) DS D g Forward Transconductance 180 S V = 25V, I = 48A fs DS D 20 V = 75V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 60V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 89 130 I = 48A g D Q Gate-to-Source Charge 21 32 nC V = 60V gs DS Q Gate-to-Drain Mille) Charge 30 45 V = 10V gd GS t Turn-On Delay Time 12 V = 38V d(on) DD t Rise Time 80 I = 48A r D ns t Turn-Off Delay Time 55 R = 4.6 d(off) G t Fall Time 49 V = 10V f GS D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 3270 V = 0V iss GS C Output Capacitance 520 pF V = 25V oss DS C Reverse Transfer Capacitance 78 = 1.0MHz, See Fig. 5 rss C Output Capacitance 3500 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 340 V = 0V, V = 60V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 640 V = 0V, V = 0V to 60V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 80 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 320 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 48A, V = 0V SD J S GS t Reverse Recovery Time 85 130 ns T = 25C, I = 48A, V = 38V rr J F DD Q Reverse Recovery Charge 280 420 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D C eff. is a fixed capacitance that gives the same charging time oss Repetitive rating pulse width limited by as C while V is rising from 0 to 80% V . max. junction temperature. (See fig. 11). oss DS DSS Starting T = 25C, L = 0.24mH Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive J Jmax R = 25 , I = 48A, V =10V (See Figure 12). G AS GS avalanche performance. I 48A, di/dt 330A/s, V V , SD DD (BR)DSS This value determined from sample failure population. 100% T 175C J tested to this value in production. Pulse width 400s duty cycle 2%. 2 www.irf.com