PD - 95129A IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175C Operating Temperature V = 55V DSS Fast Switching Repetitive Avalanche Allowed up to Tjmax R = 6.5m Lead-Free DS(on) G Description I = 75A D S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of 2 TO-220AB D Pak TO-262 applications. IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, V 10V (Silicon Limited) I T = 25C 110 GS D C I T = 100C Continuous Drain Current, V 10V GS 78 A D C Continuous Drain Current, V 10V (Package Limited) I T = 25C GS 75 D C Pulsed Drain Current I 440 DM P T = 25C Power Dissipation 170 W D C Linear Derating Factor 1.1 W/C V Gate-to-Source Voltage 20 V GS Single Pulse Avalanche Energy E 180 mJ AS (Thermally limited) Single Pulse Avalanche Energy Tested Value E (Tested ) 250 AS Avalanche Current I AR See Fig.12a, 12b, 15, 16 A Repetitive Avalanche Energy E AR mJ T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R JC 0.90 C/W Junction-to-Case R CS 0.50 Case-to-Sink, Flat Greased Surface R 62 JA Junction-to-Ambient R 40 JA Junction-to-Ambient (PCB Mount) www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V / T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.051 V/C Reference to 25C, I = 1mA D R m Static Drain-to-Source On-Resistance 4.9 6.5 V = 10V, I = 66A DS(on) GS D V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A DS GS D gfs Forward Transconductance 71 S V = 25V, I = 66A DS D I DSS Drain-to-Source Leakage Current 20 A V = 55V, V = 0V DS GS 250 V = 55V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 20V GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q g Total Gate Charge 76 110 I = 66A D Q Gate-to-Source Charge 21 nC V = 44V gs DS Q gd Gate-to-Drain Mille) Charge 30 V = 10V GS t Turn-On Delay Time 18 V = 28V d(on) DD t r Rise Time 95 I = 66A D t Turn-Off Delay Time 45 ns R = 6.8 d(off) G t f Fall Time 67 V = 10V GS L D Internal Drain Inductance 4.5 Between lead, nH 6mm (0.25in.) L S Internal Source Inductance 7.5 from package and center of die contact C iss Input Capacitance 3450 V = 0V GS C Output Capacitance 550 V = 25V oss DS C rss Reverse Transfer Capacitance 310 pF = 1.0MHz C Output Capacitance 1940 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C oss Output Capacitance 430 V = 0V, V = 44V, = 1.0MHz GS DS C eff. Effective Output Capacitance 640 V = 0V, V = 0V to 44V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 75 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 440 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 66A, V = 0V SD J S GS t Reverse Recovery Time 28 42 ns T = 25C, I = 66A, V = 25V rr DD J F Q Reverse Recovery Charge 25 38 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com