X-On Electronics has gained recognition as a prominent supplier of IRF350 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF350 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF350 Infineon

IRF350 electronic component of Infineon
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See Product Specifications
Part No.IRF350
Manufacturer: Infineon
Category: MOSFETs
Description: Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3
Datasheet: IRF350 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 20.3916 ea
Line Total: USD 203.92 
Availability - 0
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 10
Multiples : 10
10 : USD 20.3916
10 : USD 16.9625
50 : USD 15.2479
100 : USD 14.7818
250 : USD 13.6998

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 23.8192
10 : USD 22.1161
25 : USD 21.8899
50 : USD 21.4521

   
Manufacturer
Product Category
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Channel Mode
Drain Current Max
Frequency Max
Gate-Source Voltage Max
Output Power Max
Noise Figure
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain Efficiency
Drain-Source On-Volt
Power Gain
Rad Hardened
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRF350 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF350 and other electronic components in the MOSFETs category and beyond.

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PD - 90339F IRF350 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768 HEXFET TRANSISTORS JANTXV2N6768 THRU-HOLE (TO-204AA/AE) REF:MIL-PRF-19500/543 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF350 400V 0.300 14A The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state resis- TO-3 tance combined with high transconductance superior re- verse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well estab- Features: lished advantages of MOSFETs such as voltage control, Repetitive Avalanche Ratings very fast switching, ease of paralleling and temperature Dynamic dv/dt Rating stability of the electrical parameters. Hermetically Sealed They are well suited for applications such as switching Simple Drive Requirements power supplies, motor controls, inverters, choppers, audio Ease of Paralleling amplifiers and high energy pulse circuits. Absolute Maximum Ratings Parameter Units I V = 10V, T = 25C Continuous Drain Current 14 D GS C A I V = 10V, T = 100C Continuous Drain Current 9.0 D GS C I Pulsed Drain Current 56 DM P T = 25C Max. Power Dissipation 150 W D C Linear Derating Factor 1.2 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 11.3 mJ AS I Avalanche Current 14 A AR E Repetitive Avalanche Energy 15 mJ AR dv/dt Peak Diode Recovery dv/dt 4.0 V/ns T Operating Junction -55 to 150 J o T Storage Temperature Range C STG Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 11.5 (typical) g For footnotes refer to the last page www.irf.com 1 01/22/01IRF350 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage 400 V V = 0V, I = 1.0mA DSS GS D BV / T Temperature Coefficient of Breakdown 0.46 V/C Reference to 25C, I = 1.0mA DSS J D Voltage R Static Drain-to-Source On-State 0.300 V = 10V, I =9.0A DS(on) GS D Resistance 0.400 V =10V, I =14A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I =250A GS(th) DS GS D g Forward Transconductance 6.0 S ( ) V > 15V, I =9.0A fs DS DS I Zero Gate Voltage Drain Current 25 V =320V, V =0V DSS DS GS A 250 V =320V DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward 100 V =20V GSS GS nA I Gate-to-Source Leakage Reverse -100 V =-20V GSS GS Q Total Gate Charge 52 110 V =10V, ID 14A g GS = Q Gate-to-Source Charge 5.0 18 nC V =200V gs DS Q Gate-to-Drain (Miller) Charge 25 65 gd t Turn-On Delay Time 35 V =200V, I =14A, d(on) DD D t Rise Time 190 R =2.35 r G ns t Turn-Off Delay Time 170 d(off) t Fall Time 130 f L L Total Inductance 6.1 nH S + D Measured from the center of drain pad to center of source pad C Input Capacitance 2600 V = 0V, V =25V iss GS DS C Output Capacitance 680 pF f = 1.0MHz oss C Reverse Transfer Capacitance 250 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) 14 S A I Pulse Source Current (Body Diode) 56 SM V Diode Forward Voltage 1.7 V T = 25C, I =14A, V = 0V j SD S GS t Reverse Recovery Time 1200 nS Tj = 25C, I =14A, di/dt 100A/ s rr F Q Reverse Recovery Charge 250 c V 50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction to Case 0.83 thJC C/W R Junction to Ambient 30 Typical socket mount thJA For footnotes refer to the last page 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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