PD - 90339F IRF350 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768 HEXFET TRANSISTORS JANTXV2N6768 THRU-HOLE (TO-204AA/AE) REF:MIL-PRF-19500/543 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF350 400V 0.300 14A The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state resis- TO-3 tance combined with high transconductance superior re- verse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well estab- Features: lished advantages of MOSFETs such as voltage control, Repetitive Avalanche Ratings very fast switching, ease of paralleling and temperature Dynamic dv/dt Rating stability of the electrical parameters. Hermetically Sealed They are well suited for applications such as switching Simple Drive Requirements power supplies, motor controls, inverters, choppers, audio Ease of Paralleling amplifiers and high energy pulse circuits. Absolute Maximum Ratings Parameter Units I V = 10V, T = 25C Continuous Drain Current 14 D GS C A I V = 10V, T = 100C Continuous Drain Current 9.0 D GS C I Pulsed Drain Current 56 DM P T = 25C Max. Power Dissipation 150 W D C Linear Derating Factor 1.2 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 11.3 mJ AS I Avalanche Current 14 A AR E Repetitive Avalanche Energy 15 mJ AR dv/dt Peak Diode Recovery dv/dt 4.0 V/ns T Operating Junction -55 to 150 J o T Storage Temperature Range C STG Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 11.5 (typical) g For footnotes refer to the last page www.irf.com 1 01/22/01IRF350 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage 400 V V = 0V, I = 1.0mA DSS GS D BV / T Temperature Coefficient of Breakdown 0.46 V/C Reference to 25C, I = 1.0mA DSS J D Voltage R Static Drain-to-Source On-State 0.300 V = 10V, I =9.0A DS(on) GS D Resistance 0.400 V =10V, I =14A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I =250A GS(th) DS GS D g Forward Transconductance 6.0 S ( ) V > 15V, I =9.0A fs DS DS I Zero Gate Voltage Drain Current 25 V =320V, V =0V DSS DS GS A 250 V =320V DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward 100 V =20V GSS GS nA I Gate-to-Source Leakage Reverse -100 V =-20V GSS GS Q Total Gate Charge 52 110 V =10V, ID 14A g GS = Q Gate-to-Source Charge 5.0 18 nC V =200V gs DS Q Gate-to-Drain (Miller) Charge 25 65 gd t Turn-On Delay Time 35 V =200V, I =14A, d(on) DD D t Rise Time 190 R =2.35 r G ns t Turn-Off Delay Time 170 d(off) t Fall Time 130 f L L Total Inductance 6.1 nH S + D Measured from the center of drain pad to center of source pad C Input Capacitance 2600 V = 0V, V =25V iss GS DS C Output Capacitance 680 pF f = 1.0MHz oss C Reverse Transfer Capacitance 250 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) 14 S A I Pulse Source Current (Body Diode) 56 SM V Diode Forward Voltage 1.7 V T = 25C, I =14A, V = 0V j SD S GS t Reverse Recovery Time 1200 nS Tj = 25C, I =14A, di/dt 100A/ s rr F Q Reverse Recovery Charge 250 c V 50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction to Case 0.83 thJC C/W R Junction to Ambient 30 Typical socket mount thJA For footnotes refer to the last page 2 www.irf.com