IRF3703PbF SMPS MOSFET HEXFET Power MOSFET Applications V R max I DSS DS(on) D Synchronous Rectification 30V 2.8m 210A Active ORing Lead-Free Benefits Ultra Low On-Resistance Low Gate Impedance to Reduce Switching Losses Fully Avalanche Rated TO-220AB Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 210 D C GS I T = 100C Continuous Drain Current, V 10V 100 A D C GS I Pulsed Drain Current 1000 DM P T = 25C Power Dissipation 230 W D C P T = 25C Power Dissipation 3.8 D A Linear Derating Factor 1.5 W/C V Gate-to-Source Voltage 20 V GS dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T T Junction and Storage Temperature Range -55 to + 175 C J, STG Parameter Typ. Max. Units R Junction-to-Case 0.65 JC R Case-to-Sink, Flat, Greased Surface 0.5 C/W CS R Junction-to-Ambient 62 JA Notes through are on page 8 www.irf.com 1 02/02/04 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.028 V/C Reference to 25C, I = 1mA (BR)DSS J D 2.3 2.8 V = 10V, I = 76A GS D m R Static Drain-to-Source On-Resistance DS(on) 2.8 3.9 V = 7.0V, I = 76A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D 20 V = 24V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 24V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I GSS nA Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions g Forward Transconductance 150 S V = 24V, I = 76A fs DS D Q Total Gate Charge 209 I = 76A g D Q Gate-to-Source Charge 62 nC V = 24V gs DS Q Gate-to-Drain Mille) Charge 42 V = 10V, gd GS t Turn-On Delay Time 18 V = 15V, V = 10V d(on) DD GS t Rise Time 123 I = 76A r D ns t Turn-Off Delay Time 53 R = 1.8 d(off) G t Fall Time 24 V = 10V f GS C Input Capacitance 8250 V = 0V iss GS C Output Capacitance 3000 V = 25V oss DS C Reverse Transfer Capacitance 290 pF = 1.0MHz rss C Output Capacitance 10360 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 3060 V = 0V, V = 24V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 2590 V = 0V, V = 0V to 24V oss GS DS Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 1700 mJ AS I Avalanche Current 76 A AR E Repetitive Avalanche Energy 23 mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 210 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 1000 (Body Diode) p-n junction diode. S V Diode Forward Voltage 0.8 1.3 V T = 25C, I = 76A, V = 0V SD J S GS t Reverse Recovery Time 80 120 ns T = 25C, I = 76A, V = 16V rr J F DS Q Reverse RecoveryCharge 185 275 nC di/dt = 100A/s rr 2 www.irf.com