IRF3707ZPbF IRF3707ZSPbF IRF3707ZLPbF Applications HEXFET Power MOSFET High Frequency Synchronous Buck Converters for Computer Processor Power V R max Qg DSS DS(on) Lead-Free 9.5m 30V 9.7nC Benefits Low R at 4.5V V DS(on) GS Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 2 TO-220AB D Pak TO-262 IRF3707ZPbF IRF3707ZSPbF IRF3707ZLPbF Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V 59 I T = 25C A C GS D I T = 100C Continuous Drain Current, V 10V 42 GS D C Pulsed Drain Current I 230 DM P T = 25C Maximum Power Dissipation 57 W D C P T = 100C Maximum Power Dissipation 28 D C Linear Derating Factor 0.38 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw 10 lbf in (1.1 N m) Thermal Resistance Parameter Typ. Max. Units R JC Junction-to-Case 2.653 C/W R 0.50 CS Case-to-Sink, Flat Greased Surface R JA Junction-to-Ambient 62 R JA Junction-to-Ambient (PCB Mount) 40 Notes through are on page 12 www.irf.com 1 05/08/08 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 0.023 mV/C Reference to 25C, I = 1mA D m R DS(on) Static Drain-to-Source On-Resistance 7.5 9.5 V = 10V, I = 21A GS D 10 12.5 V = 4.5V, I = 17A GS D V GS(th) Gate Threshold Voltage 1.35 1.80 2.25 V V = V , I = 25A DS GS D V /T GS(th) J Gate Threshold Voltage Coefficient -5.3 mV/C I DSS Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DS GS 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS = -20V Gate-to-Source Reverse Leakage -100 V GS gfs Forward Transconductance 81 S V = 15V, I = 17A DS D Q g Total Gate Charge 9.7 15 Q gs1 Pre-Vth Gate-to-Source Charge 2.8 V = 15V DS Q gs2 Post-Vth Gate-to-Source Charge 1.0 nC V = 4.5V GS Q gd Gate-to-Drain Charge 3.4 I = 17A D Q Gate Charge Overdrive 2.5 See Fig. 16 godr Switch Charge (Q + Q ) Q 4.4 sw gs2 gd Q Output Charge 6.2 nC V = 16V, V = 0V oss DS GS t d(on) Turn-On Delay Time 9.8 V = 15V, V = 4.5V DD GS t r Rise Time 41 I = 17A D t d(off) Turn-Off Delay Time 12 ns Clamped Inductive Load t f Fall Time 3.6 C iss Input Capacitance 1210 V = 0V GS C Output Capacitance 260 pF V = 15V oss DS C Reverse Transfer Capacitance 130 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 40 mJ AS Avalanche Current I AR 23 A Repetitive Avalanche Energy E AR 5.7 mJ Diode Characteristics Parameter Min. Typ. Max. Units Conditions D 59 I S Continuous Source Current MOSFET symbol (Body Diode) A showing the G I Pulsed Source Current 230 integral reverse SM S (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 17A, V = 0V J S GS t rr Reverse Recovery Time 14 21 ns T = 25C, I = 17A, V = 15V J F DD Q di/dt = 100A/s rr Reverse Recovery Charge 5.2 7.8 nC 2 www.irf.com