PD - 95466A IRF3710ZPbF IRF3710ZSPbF Features IRF3710ZLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature D V = 100V DSS Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free R = 18m DS(on) G Description I = 59A D This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 2 TO-220AB D Pak TO-262 IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF Absolute Maximum Ratings Parameter Max. Units I T = 25C 59 A C Continuous Drain Current, V 10V (Silicon Limited) D GS I T = 100C 42 C Continuous Drain Current, V 10V (See Fig. 9) D GS I Pulsed Drain Current 240 DM P T = 25C C Maximum Power Dissipation 160 W D Linear Derating Factor 1.1 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) AS 170 mJ Single Pulse Avalanche Energy Tested Value E (tested) AS 200 Avalanche Current I AR See Fig.12a,12b,15,16 A Repetitive Avalanche Energy E AR mJ T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R JC Junction-to-Case 0.92 C/W Case-to-Sink, Flat, Greased Surface R CS 0.50 R Junction-to-Ambient 62 JA R 40 JA Junction-to-Ambient (PCB Mount, steady state) HEXFET is a registered trademark of International Rectifier. www.irf.com 1 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A GS D V / T DSS J Breakdown Voltage Temp. Coefficient 0.10 V/C Reference to 25C, I = 1mA D R Static Drain-to-Source On-Resistance 14 18 V = 10V, I = 35A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Transconductance 35 S V = 50V, I = 35A DS D I DSS Drain-to-Source Leakage Current 20 A V = 100V, V = 0V DS GS 250 V = 100V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q g Total Gate Charge 82120nC I = 35A D Q Gate-to-Source Charge 19 28 V = 80V gs DS Q Gate-to-Drain Mille) Charge 27 40 V = 10V gd GS t d(on) Turn-On Delay Time 17 ns V = 50V DD t r Rise Time 77 I = 35A D t Turn-Off Delay Time 41 R = 6.8 d(off) G t Fall Time 56 V = 10V f GS L D Internal Drain Inductance 4.5 nH Between lead, D 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact C iss Input Capacitance 2900 pF V = 0V GS C oss Output Capacitance 290 V = 25V DS C Reverse Transfer Capacitance 150 = 1.0MHz, See Fig. 5 rss C Output Capacitance 1130 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C oss Output Capacitance 170 V = 0V, V = 80V, = 1.0MHz GS DS C eff. oss Effective Output Capacitance 280 V = 0V, V = 0V to 80V GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current 59 MOSFET symbol S (Body Diode) A showing the G I SM Pulsed Source Current 240 integral reverse S (Body Diode) p-n junction diode. V T = 25C, I = 35A, V = 0V Diode Forward Voltage 1.3 V SD J S GS t Reverse Recovery Time T = 25C, I = 35A, V = 25V rr 5075ns DD J F Q di/dt = 100A/s rr Reverse Recovery Charge 100 160 nC t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on C eff. is a fixed capacitance that gives the same charging time Repetitive rating pulse width limited by oss max. junction temperature. (See fig. 11). as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.27mH, Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive Jmax J Jmax R = 25 , I = 35A, V =10V. Part not avalanche performance. G AS GS recommended for use above this value. This value determined from sample failure population. 100% I 35A, di/dt 380A/s, V V , tested to this value in production. SD DD (BR)DSS 2 T 175C. J This is applied to D Pak, when mounted on 1 square PCB Pulse width 1.0ms duty cycle 2%. ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note AN-994. 2 www.irf.com