StrongIRFET IRF40R207 HEXFET Power MOSFET Application Brushed Motor drive applications V 40V DSS D BLDC Motor drive applications Battery powered circuits R typ. 4.2m DS(on) Half-bridge and full-bridge topologies max 5.1m G Synchronous rectifier applications I 90A D (Silicon Limited) Resonant mode power supplies S OR-ing and redundant power switches I D (Package Limited) 56A DC/DC and AC/DC converters DC/AC Inverters Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability D-Pak Lead-Free IRF40R207 RoHS Compliant, Halogen-Free G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity Tape and Reel 2000 IRF40R207 IRF40R207 D-Pak 16 100 Limited by package I = 55A D 14 80 12 10 60 8 T = 125C J 40 6 4 20 T = 25C 2 J 0 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback March 31, 2015 R , Drain-to -Source On Resistance (m ) DS(on) I , Drain Current (A) D IRF40R207 Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, VGS 10V (Silicon Limited) 90 D C I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 64 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 56 D C GS I Pulsed Drain Current 337* DM P T = 25C Maximum Power Dissipation 83 W D C Linear Derating Factor 0.56 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics E AS (Thermally limited) 86 Single Pulse Avalanche Energy mJ E 165 AS (Thermally limited) Single Pulse Avalanche Energy I AR Avalanche Current A See Fig 15, 16, 23a, 23b E AR Repetitive Avalanche Energy mJ Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.8 JC Junction-to-Ambient (PCB Mounted) R 50 C/W CS Junction-to-Ambient R 110 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.039 V/C Reference to 25C, I = 1.0mA V / T (BR)DSS J D 4.2 5.1 V = 10V, I = 55A GS D R Static Drain-to-Source On-Resistance DS(on) m 5.9 V = 6.0V, I = 28A GS D V Gate Threshold Voltage 2.2 3.0 3.9 V V = V , I = 50A GS(th) DS GS D 1.0 V =40 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V =40V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.0 G Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 56A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 0.056mH,R = 50, I = 55A, V =10V. Jmax J G AS GS I 55A, di/dt 890A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while VDS is rising from 0 to 80% V . oss oss DSS R is measured at T approximately 90C. J Limited by T , starting T = 25C, L = 1mH,R = 50 , I = 18A, V =10V. Jmax J G AS GS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994.: