PD - 95468A IRF4104PbF IRF4104SPbF IRF4104LPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175C Operating Temperature V = 40V DSS Fast Switching Repetitive Avalanche Allowed up to Tjmax R = 5.5m Lead-Free DS(on) G Description I = 75A D This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 2 TO-220AB D Pak TO-262 IRF4104PbF IRF4104SPbF IRF4104LPbF Absolute Maximum Ratings Parameter Max. Units (Silicon Limited) I T = 25C Continuous Drain Current, V 10V GS 120 D C Continuous Drain Current, V 10V I T = 100C GS 84 A D C Continuous Drain Current, V 10V (Package limited) I T = 25C 75 D C GS Pulsed Drain Current I 470 DM P T = 25C Power Dissipation 140 W D C Linear Derating Factor 0.95 W/C V Gate-to-Source Voltage 20 V GS Single Pulse Avalanche Energy E 120 mJ AS (Thermally limited) Single Pulse Avalanche Energy Tested Value E (Tested ) 220 AS Avalanche Current I AR See Fig.12a, 12b, 15, 16 A Repetitive Avalanche Energy E AR mJ T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R 1.05 C/W JC Junction-to-Case R 0.50 CS Case-to-Sink, Flat Greased Surface R 62 JA Junction-to-Ambient R 40 JA Junction-to-Ambient (PCB Mount) www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A GS D V / T Breakdown Voltage Temp. Coefficient 0.032 V/C Reference to 25C, I = 1mA (BR)DSS J D R m DS(on) Static Drain-to-Source On-Resistance 4.3 5.5 V = 10V, I = 75A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Transconductance 63 V V = 10V, I = 75A DS D I Drain-to-Source Leakage Current 20 A V = 40V, V = 0V DSS DS GS 250 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 68 100 I = 75A g D Q gs Gate-to-Source Charge 21 nC V = 32V DS Q Gate-to-Drain Mille) Charge 27 V = 10V gd GS t d(on) Turn-On Delay Time 16 V = 20V DD t Rise Time 130 I = 75A r D t d(off) Turn-Off Delay Time 38 ns R = 6.8 G t f Fall Time 77 V = 10V GS L Internal Drain Inductance 4.5 Between lead, D nH 6mm (0.25in.) L Internal Source Inductance 7.5 from package S and center of die contact C Input Capacitance 3000 V = 0V iss GS C oss Output Capacitance 660 V = 25V DS C Reverse Transfer Capacitance 380 pF = 1.0MHz rss C oss Output Capacitance 2160 V = 0V, V = 1.0V, = 1.0MHz GS DS C Output Capacitance 560 V = 0V, V = 32V, = 1.0MHz oss GS DS C eff. oss Effective Output Capacitance 850 V = 0V, V = 0V to 32V GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 75 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 470 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 75A, V = 0V SD J S GS t Reverse Recovery Time 23 35 ns T = 25C, I = 75A, V = 20V rr J F DD di/dt = 100A/s Q Reverse Recovery Charge 6.8 10 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com