PD - 94816
IRF4905PbF
HEXFET Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
D
Dynamic dv/dt Rating
V = -55V
DSS
175C Operating Temperature
Fast Switching
R = 0.02
DS(on)
G
P-Channel
Fully Avalanche Rated
I = -74A
D
Lead-Free S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
TO-220AB
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
I @ T = 25C Continuous Drain Current, V @ -10V -74
D C GS
I @ T = 100C Continuous Drain Current, V @ -10V -52 A
D C GS
I Pulsed Drain Current -260
DM
P @T = 25C Power Dissipation 200 W
D C
Linear Derating Factor 1.3 W/C
V Gate-to-Source Voltage 20 V
GS
E Single Pulse Avalanche Energy 930 mJ
AS
I Avalanche Current -38 A
AR
E Repetitive Avalanche Energy 20 mJ
AR
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T Operating Junction and -55 to + 175
J
T Storage Temperature Range
C
STG
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm)
Thermal Resistance
Parameter Typ. Max. Units
R Junction-to-Case 0.75
JC
R Case-to-Sink, Flat, Greased Surface 0.50 C/W
CS
R Junction-to-Ambient 62
JA
11/6/03IRF4905PbF
Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Drain-to-Source Breakdown Voltage -55 V V = 0V, I = -250A
(BR)DSS GS D
V /T Breakdown Voltage Temp. Coefficient -0.05 V/C Reference to 25C, I = -1mA
(BR)DSS J D
R Static Drain-to-Source On-Resistance 0.02 V = -10V, I = -38A
DS(on) GS D
V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A
GS(th) DS GS D
g Forward Transconductance 21 S V = -25V, I = -38A
fs DS D
-25 V = -55V, V = 0V
DS GS
I Drain-to-Source Leakage Current
A
DSS
-250 V = -44V, V = 0V, T = 150C
DS GS J
Gate-to-Source Forward Leakage 100 V = 20V
GS
I nA
GSS
Gate-to-Source Reverse Leakage -100 V = -20V
GS
Q Total Gate Charge 180 I = -38A
g D
Q Gate-to-Source Charge 32 nC V = -44V
gs DS
Q Gate-to-Drain Mille) Charge 86 V = -10V, See Fig. 6 and 13
gd GS
t Turn-On Delay Time 18 V = -28V
d(on) DD
t Rise Time 99 I = -38A
r D
ns
t Turn-Off Delay Time 61 R = 2.5
d(off) G
t Fall Time 96 R = 0.72, See Fig. 10
f D
D
Between lead,
L Internal Drain Inductance 4.5
D
6mm (0.25in.)
nH
G
from package
L Internal Source Inductance 7.5
S
and center of die contact
S
C Input Capacitance 3400 V = 0V
iss GS
C Output Capacitance 1400 pF V = -25V
oss DS
C Reverse Transfer Capacitance 640 = 1.0MHz, See Fig. 5
rss
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
D
I Continuous Source Current MOSFET symbol
S
-74
(Body Diode) showing the
A
G
I Pulsed Source Current integral reverse
SM
-260
(Body Diode) p-n junction diode.
S
V Diode Forward Voltage -1.6 V T = 25C, I = -38A, V = 0V
SD J S GS
t Reverse Recovery Time 89 130 ns T = 25C, I = -38A
rr J F
Q Reverse Recovery Charge 230 350 nC di/dt = -100A/s
rr
t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L )
on S D
Notes:
Repetitive rating; pulse width limited by
I -38A, di/dt -270A/s, V V ,
SD DD (BR)DSS
max. junction temperature. ( See fig. 11 )
T 175C
J
Starting T = 25C, L = 1.3mH Pulse width 300s; duty cycle 2%.
J
R = 25, I = -38A. (See Figure 12)
G AS