X-On Electronics has gained recognition as a prominent supplier of IRF4905STRRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF4905STRRPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF4905STRRPBF Infineon

IRF4905STRRPBF electronic component of Infineon
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See Product Specifications
Part No.IRF4905STRRPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET 1 P-CH -55V HEXFET 20mOhms 120nC
Datasheet: IRF4905STRRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8174 ea
Line Total: USD 0.82 
Availability - 1
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8174

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the IRF4905STRRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF4905STRRPBF and other electronic components in the MOSFETs category and beyond.

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PD - 97034 IRF4905SPbF IRF4905LPbF Features HEXFET Power MOSFET O Advanced Process Technology D O Ultra Low On-Resistance V = -55V DSS O 150C Operating Temperature O Fast Switching R = 20m DS(on) O Repetitive Avalanche Allowed up to Tjmax G O Some Parameters Are Differrent from I = -42A D IRF4905S S O Lead-Free D D Description Features of this design are a 150C junction oper- ating temperature, fast switching speed and im- S proved repetitive avalanche rating . These features S D D combine to make this design an extremely efficient G G and reliable device for use in a wide variety of other 2 D Pak TO-262 applications. IRF4905LPbF IRF4905SPbF GD S Gate Drain Source Absolute Maximum Ratings Parameter Max. Units -70 I T = 25C Continuous Drain Current, V 10V (Silicon Limited) GS D C Continuous Drain Current, V 10V (Silicon Limited) -44 I T = 100C A GS D C Continuous Drain Current, V 10V (Package Limited) -42 I T = 25C D C GS I Pulsed Drain Current -280 DM 170 P T = 25C Power Dissipation W D C 1.3 Linear Derating Factor W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 140 AS (Thermally limited) mJ E (Tested ) 790 Single Pulse Avalanche Energy Tested Value AS I Avalanche Current See Fig.12a, 12b, 15, 16 A AR E Repetitive Avalanche Energy AR mJ -55 to + 150 T Operating Junction and J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.75 JC R Junction-to-Ambient (PCB Mount, steady state) 40 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = -250A V Drain-to-Source Breakdown Voltage -55 V (BR)DSS GS D V /T Reference to 25C, I = -1mA Breakdown Voltage Temp. Coefficient -0.054 V/C D (BR)DSS J R m V = -10V, I = -42A Static Drain-to-Source On-Resistance 20 GS D DS(on) V = V , I = -250A V Gate Threshold Voltage -2.0 -4.0 V DS GS D GS(th) V = -25V, I = -42A gfs Forward Transconductance 19 S DS D V = -55V, V = 0V I Drain-to-Source Leakage Current -25 A DSS DS GS V = -44V, V = 0V, T = 125C -200 DS GS J I V = -20V Gate-to-Source Forward Leakage 100 nA GS GSS V = 20V Gate-to-Source Reverse Leakage -100 GS I = -42A Q Total Gate Charge 120 180 g D V = -44V Q Gate-to-Source Charge 32 nC gs DS Q V = -10V Gate-to-Drain Mille) Charge 53 GS gd t V = -28V Turn-On Delay Time 20 DD d(on) I = -42A t Rise Time 99 D r R = 2.6 t Turn-Off Delay Time 51 ns d(off) G V = -10V t Fall Time 64 f GS L Internal Source Inductance 7.5 nH Between lead, S and center of die contact V = 0V C Input Capacitance 3500 GS iss V = -25V C Output Capacitance 1250 oss DS = 1.0MHz C Reverse Transfer Capacitance 450 pF rss C V = 0V, V = -1.0V, = 1.0MHz Output Capacitance 4620 GS DS oss C V = 0V, V = -44V, = 1.0MHz Output Capacitance 940 GS DS oss V = 0V, V = 0V to -44V C eff. Effective Output Capacitance 1530 GS DS oss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions MOSFET symbol I Continuous Source Current -42 S (Body Diode) A showing the I Pulsed Source Current -280 integral reverse SM p-n junction diode. (Body Diode) T = 25C, I = -42A, V = 0V V Diode Forward Voltage -1.3 V J S GS SD T = 25C, I = -42A, V = -28V t Reverse Recovery Time 61 92 ns J F DD rr Q Reverse Recovery Charge 150 220 nC di/dt = -100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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