PD - 97034 IRF4905SPbF IRF4905LPbF Features HEXFET Power MOSFET O Advanced Process Technology D O Ultra Low On-Resistance V = -55V DSS O 150C Operating Temperature O Fast Switching R = 20m DS(on) O Repetitive Avalanche Allowed up to Tjmax G O Some Parameters Are Differrent from I = -42A D IRF4905S S O Lead-Free D D Description Features of this design are a 150C junction oper- ating temperature, fast switching speed and im- S proved repetitive avalanche rating . These features S D D combine to make this design an extremely efficient G G and reliable device for use in a wide variety of other 2 D Pak TO-262 applications. IRF4905LPbF IRF4905SPbF GD S Gate Drain Source Absolute Maximum Ratings Parameter Max. Units -70 I T = 25C Continuous Drain Current, V 10V (Silicon Limited) GS D C Continuous Drain Current, V 10V (Silicon Limited) -44 I T = 100C A GS D C Continuous Drain Current, V 10V (Package Limited) -42 I T = 25C D C GS I Pulsed Drain Current -280 DM 170 P T = 25C Power Dissipation W D C 1.3 Linear Derating Factor W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 140 AS (Thermally limited) mJ E (Tested ) 790 Single Pulse Avalanche Energy Tested Value AS I Avalanche Current See Fig.12a, 12b, 15, 16 A AR E Repetitive Avalanche Energy AR mJ -55 to + 150 T Operating Junction and J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.75 JC R Junction-to-Ambient (PCB Mount, steady state) 40 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = -250A V Drain-to-Source Breakdown Voltage -55 V (BR)DSS GS D V /T Reference to 25C, I = -1mA Breakdown Voltage Temp. Coefficient -0.054 V/C D (BR)DSS J R m V = -10V, I = -42A Static Drain-to-Source On-Resistance 20 GS D DS(on) V = V , I = -250A V Gate Threshold Voltage -2.0 -4.0 V DS GS D GS(th) V = -25V, I = -42A gfs Forward Transconductance 19 S DS D V = -55V, V = 0V I Drain-to-Source Leakage Current -25 A DSS DS GS V = -44V, V = 0V, T = 125C -200 DS GS J I V = -20V Gate-to-Source Forward Leakage 100 nA GS GSS V = 20V Gate-to-Source Reverse Leakage -100 GS I = -42A Q Total Gate Charge 120 180 g D V = -44V Q Gate-to-Source Charge 32 nC gs DS Q V = -10V Gate-to-Drain Mille) Charge 53 GS gd t V = -28V Turn-On Delay Time 20 DD d(on) I = -42A t Rise Time 99 D r R = 2.6 t Turn-Off Delay Time 51 ns d(off) G V = -10V t Fall Time 64 f GS L Internal Source Inductance 7.5 nH Between lead, S and center of die contact V = 0V C Input Capacitance 3500 GS iss V = -25V C Output Capacitance 1250 oss DS = 1.0MHz C Reverse Transfer Capacitance 450 pF rss C V = 0V, V = -1.0V, = 1.0MHz Output Capacitance 4620 GS DS oss C V = 0V, V = -44V, = 1.0MHz Output Capacitance 940 GS DS oss V = 0V, V = 0V to -44V C eff. Effective Output Capacitance 1530 GS DS oss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions MOSFET symbol I Continuous Source Current -42 S (Body Diode) A showing the I Pulsed Source Current -280 integral reverse SM p-n junction diode. (Body Diode) T = 25C, I = -42A, V = 0V V Diode Forward Voltage -1.3 V J S GS SD T = 25C, I = -42A, V = -28V t Reverse Recovery Time 61 92 ns J F DD rr Q Reverse Recovery Charge 150 220 nC di/dt = -100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com