PD - 94818 IRF520NPbF HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating V = 100V DSS 175C Operating Temperature Fast Switching R = 0.20 Fully Avalanche Rated DS(on) G Lead-Free Description I = 9.7A D S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 TO-220AB contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 9.7 D C GS I T = 100C Continuous Drain Current, V 10V 6.8 A D C GS I Pulsed Drain Current 38 DM P T = 25C Power Dissipation 48 W D C Linear Derating Factor 0.32 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 91 mJ AS I Avalanche Current 5.7 A AR E Repetitive Avalanche Energy 4.8 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 3.1 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA 11/5/03IRF520NPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.11 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.20 V = 10V, I = 5.7A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 2.7 S V = 50V, I = 5.7A fs DS D 25 V = 100V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 80V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 25 I = 5.7A g D Q Gate-to-Source Charge 4.8 nC V = 80V gs DS Q Gate-to-Drain Mille) Charge 11 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 4.5 V = 50V d(on) DD t Rise Time 23 I = 5.7A r D ns t Turn-Off Delay Time 32 R = 22 d(off) G t Fall Time 23 R = 8.6, See Fig. 10 f D D Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 330 V = 0V iss GS C Output Capacitance 92 pF V = 25V oss DS C Reverse Transfer Capacitance 54 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 9.7 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 38 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.3 V T = 25C, I = 5.7A, V = 0V SD J S GS t Reverse Recovery Time 99 150 ns T = 25C, I = 5.7A rr J F Q Reverse RecoveryCharge 390 580 nC di/dt = 100A/s rr Notes: Repetitive rating pulse width limited by I 5.7A, di/dt 240A/s, V V , SD DD (BR)DSS max. junction temperature. ( See fig. 11 ) T 175C J V = 25V, starting T = 25C, L = 4.7mH Pulse width 300s duty cycle 2%. DD J R = 25, I = 5.7A. (See Figure 12) G AS