X-On Electronics has gained recognition as a prominent supplier of IRF530NPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF530NPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF530NPBF Infineon

IRF530NPBF electronic component of Infineon
IRF530NPBF Infineon
IRF530NPBF MOSFETs
IRF530NPBF  Semiconductors

Images are for reference only
See Product Specifications
Part No. IRF530NPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N Trench 100V 17A 4V @ 250uA 90 mΩ @ 9A,10V TO-220 (TO-220-3) RoHS
Datasheet: IRF530NPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
91: USD 0.385 ea
Line Total: USD 35.04 
Availability - 0
MOQ: 91  Multiples: 1
Pack Size: 1
Availability Price Quantity
4710
Ship by Fri. 14 Mar to Wed. 19 Mar
MOQ : 1
Multiples : 1
1 : USD 1.0727
10 : USD 0.8606
50 : USD 0.5681
100 : USD 0.4872
500 : USD 0.4401
1000 : USD 0.4139

121
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 1.078
10 : USD 0.7056
47 : USD 0.3752
130 : USD 0.3542

1
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 2
Multiples : 1
2 : USD 45.5838

67935
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 77
Multiples : 1
77 : USD 0.8408
100 : USD 0.7286
500 : USD 0.5826
1000 : USD 0.4332
4000 : USD 0.3886
10000 : USD 0.3847

1840
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 77
Multiples : 1
77 : USD 0.8414
100 : USD 0.7292
500 : USD 0.5828
1000 : USD 0.4334
4000 : USD 0.3888
10000 : USD 0.3848

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IRF530NPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF530NPBF and other electronic components in the MOSFETs category and beyond.

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The IRF530NPBF is a MOSFET N Trench manufactured by Infineon with 100V, 17A, 4V and250uA ratings. It is packaged in the convenient TO-220-3 RoHS form factor. The device has a maximum drain to source voltage (VDS) of 100V, a continuous drain current (Id) of 17A and a gate to source voltage (VGS) of 4V. The device features a low RDS (on) of 90 milliohm at 9A and 10V. It also features reliable and robust 250 microA gate drive current capability. The infrared-reflow compatible lead-frame offers excellent thermal and electrical characteristics for improved power dissipation. This device is ideal for use in various power switching applications such as central office switching, appliance, automation and non-isolated battery operated systems.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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