X-On Electronics has gained recognition as a prominent supplier of IRF530NPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF530NPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF530NPBF Infineon

Name: IRF530NPBF
Brand: Infineon
SKU: IRF530NPBF_Infineon
Availability: InStock
Rating: 5 (11 reviews)

IRF530NPBF electronic component of Infineon

Images are for reference only
See Product Specifications

Part No.	IRF530NPBF
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET N Trench 100V 17A 4V @ 250uA 90 mÎ© @ 9A,10V TO-220 (TO-220-3) RoHS
Datasheet:	IRF530NPBF Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

82: USD 0.427 ea
Line Total: USD 35.01

Availability - 4680
Ship by Thu. 30 Jan to Wed. 05 Feb

MOQ: 82 Multiples: 50
Pack Size: 50

IRF530NPBF More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

4680

Ship by Thu. 30 Jan to Wed. 05 Feb

MOQ : 82
Multiples : 50

82 : USD 0.427
250 : USD 0.3835
1000 : USD 0.377
2500 : USD 0.3562
6250 : USD 0.3437

15005

Ship by Thu. 06 Feb to Tue. 11 Feb

MOQ : 1
Multiples : 1

1 : USD 1.0934
10 : USD 0.882
50 : USD 0.5848
100 : USD 0.5042
500 : USD 0.4574
1000 : USD 0.4312

365

Ship by Tue. 28 Jan to Thu. 30 Jan

MOQ : 1
Multiples : 1

1 : USD 1.475
10 : USD 0.7113
100 : USD 0.5676
500 : USD 0.4554
1000 : USD 0.4202
2000 : USD 0.3718
5000 : USD 0.3652

2

Ship by Thu. 30 Jan to Wed. 05 Feb

MOQ : 3
Multiples : 1

3 : USD 29.8474

44752

Ship by Thu. 30 Jan to Wed. 05 Feb

MOQ : 35
Multiples : 1

35 : USD 1.8424

Specifications

Manufacturer

Infineon Infineon

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

17 A 17 A

Vds - Drain-Source Breakdown Voltage

100 V 100 V

Rds On - Drain-Source Resistance

90 mOhms 90 mOhms

Transistor Polarity

N - Channel N - Channel

Pd - Power Dissipation

79 W 79 W

Mounting Style

Through Hole Through Hole

Package / Case

TO - 220 - 3 TO - 220 - 3

Packaging

Tube Tube

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

20 V 20 V

Qg - Gate Charge

24.7 nC 24.7 nC

Brand

Infineon Infineon

Continuous Drain Current

17 A 17 A

Drain-Source Breakdown Voltage

100 V 100 V

Gate-Source Breakdown Voltage

20 V 20 V

Power Dissipation

79 W 79 W

Rds On

90 Mohms 90 Mohms

Gate Charge Qg

24.7 nC 24.7 nC

Factory Pack Quantity :

50 50

Configuration

Single Single

Height

15.65 mm 15.65 mm

Length

10 mm 10 mm

Transistor Type

1 N - Channel 1 N - Channel

Width

4.4 mm 4.4 mm

Cnhts

8541210000 8541210000

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Notes:- Show Stocked Products With Similar Attributes.

IRF530NPBF Alternative Parts

We are delighted to provide the IRF530NPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF530NPBF and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The IRF530NPBF is a MOSFET N Trench manufactured by Infineon with 100V, 17A, 4V and250uA ratings. It is packaged in the convenient TO-220-3 RoHS form factor. The device has a maximum drain to source voltage (VDS) of 100V, a continuous drain current (Id) of 17A and a gate to source voltage (VGS) of 4V. The device features a low RDS (on) of 90 milliohm at 9A and 10V. It also features reliable and robust 250 microA gate drive current capability. The infrared-reflow compatible lead-frame offers excellent thermal and electrical characteristics for improved power dissipation. This device is ideal for use in various power switching applications such as central office switching, appliance, automation and non-isolated battery operated systems.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
4680 Ship by Thu. 30 Jan to Wed. 05 Feb MOQ : 82 Multiples : 50	82 : USD 0.427 250 : USD 0.3835 1000 : USD 0.377 2500 : USD 0.3562 6250 : USD 0.3437

15005 Ship by Thu. 06 Feb to Tue. 11 Feb MOQ : 1 Multiples : 1	1 : USD 1.0934 10 : USD 0.882 50 : USD 0.5848 100 : USD 0.5042 500 : USD 0.4574 1000 : USD 0.4312

365 Ship by Tue. 28 Jan to Thu. 30 Jan MOQ : 1 Multiples : 1	1 : USD 1.475 10 : USD 0.7113 100 : USD 0.5676 500 : USD 0.4554 1000 : USD 0.4202 2000 : USD 0.3718 5000 : USD 0.3652

2 Ship by Thu. 30 Jan to Wed. 05 Feb MOQ : 3 Multiples : 1	3 : USD 29.8474

44752 Ship by Thu. 30 Jan to Wed. 05 Feb MOQ : 35 Multiples : 1	35 : USD 1.8424

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