PD - 95100 IRF530NSPbF IRF530NLPbF HEXFET Power MOSFET Advanced Process Technology D V = 100V Ultra Low On-Resistance DSS Dynamic dv/dt Rating 175C Operating Temperature R = 90m DS(on) G Fast Switching Fully Avalanche Rated I = 17A D Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 2 The D Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the 2 D Pak TO-262 lowest possible on-resistance in any existing surface mount package. The IRF530NSPbF IRF530NLPbF 2 Pak is suitable for high current applications because of its low internal D connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF530NL) is available for low-profile applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 17 D C GS I T = 100C Continuous Drain Current, V 10V 12 A D C GS I Pulsed Drain Current 60 DM P T = 25C Power Dissipation 3.8 W D A P T = 25C Power Dissipation 70 W D C Linear Derating Factor 0.47 W/C V Gate-to-Source Voltage 20 V GS I Avalanche Current 9.0 A AR E Repetitive Avalanche Energy 7.0 mJ AR dv/dt Peak Diode Recovery dv/dt 7.4 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 2.15 JC C/W R Junction-to-Ambient (PCB Mounted,steady-state)** 40 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.11 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 90 m V = 10V, I = 9.0A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 12 S V = 50V, I = 9.0A fs DS D 25 V = 100V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 80V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 37 I = 9.0A g D Q Gate-to-Source Charge 7.2 nC V = 80V gs DS Q Gate-to-Drain Mille) Charge 11 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 9.2 V = 50V d(on) DD t Rise Time 22 I = 9.0A r D ns t Turn-Off Delay Time 35 R = 12 d(off) G t Fall Time 25 V = 10V, See Fig. 10 f GS D Between lead, L Internal Drain Inductance D 6mm (0.25in.) nH G from package L Internal Source Inductance S and center of die contact S C Input Capacitance 920 V = 0V iss GS C Output Capacitance 130 V = 25V oss DS C Reverse Transfer Capacitance 19 pF = 1.0MHz, See Fig. 5 rss E Single Pulse Avalanche Energy 340 93 mJ I = 9.0A, L = 2.3mH AS AS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 17 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 60 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 9.0A, V = 0V SD J S GS t Reverse Recovery Time 93 140 ns T = 25C, I = 9.0A rr J F Q Reverse Recovery Charge 320 480 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Repetitive rating pulse width limited by This is a typical value at device destruction and represents max. junction temperature. (See fig. 11) operation outside rated limits. Starting T = 25C, L = 2.3mH This is a calculated value limited to T = 175C . J J R = 25, I = 9.0A, V =10V (See Figure 12) Uses IRF530N data and test conditions. G AS GS I 9.0A di/d 410A/s, V V , **When mounted on 1 square PCB (FR-4 or G-10 Material). For SD DD (BR)DSS T 175C J recommended footprint and soldering techniques refer to Pulse width 400s duty cycle 2%. application note AN-994 2 www.irf.com