PD - 95130 IRF540NSPbF IRF540NLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175C Operating Temperature V = 100V DSS Fast Switching Fully Avalanche Rated R = 44m DS(on) Lead-Free G Description Advanced HEXFET Power MOSFETs from I = 33A D International Rectifier utilize advanced processing S techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 2 The D Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The 2 D Pak is suitable for high current applications because of 2 D Pak TO-262 its low internal connection resistance and can dissipate up IRF540NSPbF IRF540NLPbF to 2.0W in a typical surface mount application. The through-hole version (IRF540NL) is available for low- profile applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 33 D C GS I T = 100C Continuous Drain Current, V 10V 23 A D C GS I Pulsed Drain Current 110 DM P T = 25C Power Dissipation 130 W D C Linear Derating Factor 0.87 W/C V Gate-to-Source Voltage 20 V GS I Avalanche Current 16 A AR E Repetitive Avalanche Energy 13 mJ AR dv/dt Peak Diode Recovery dv/dt 7.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.15 JC C/W R Junction-to-Ambient (PCB mount)** 40 JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.12 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 44 m V = 10V, I = 16A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 21 S V = 50V, I = 16A fs DS D 25 V = 100V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 80V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 71 I = 16A g D Q Gate-to-Source Charge 14 nC V = 80V gs DS Q Gate-to-Drain Mille) Charge 21 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 11 V = 50V d(on) DD t Rise Time 35 I = 16A r D ns t Turn-Off Delay Time 39 R = 5.1 d(off) G t Fall Time 35 V = 10V, See Fig. 10 f GS D Between lead, L Internal Drain Inductance D 6mm (0.25in.) nH G from package L Internal Source Inductance S and center of die contact S C Input Capacitance 1960 V = 0V iss GS C Output Capacitance 250 V = 25V oss DS C Reverse Transfer Capacitance 40 pF = 1.0MHz, See Fig. 5 rss E Single Pulse Avalanche Energy 700 185 mJ I = 16A, L = 1.5mH AS AS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 33 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 110 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.2 V T = 25C, I = 16A, V = 0V SD J S GS t Reverse Recovery Time 115 170 ns T = 25C, I = 16A rr J F Q Reverse Recovery Charge 505 760 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Repetitive rating pulse width limited by This is a typical value at device destruction and represents max. junction temperature. (See fig. 11) operation outside rated limits. Starting T = 25C, L =1.5mH J This is a calculated value limited to T = 175C . J R = 25, I = 16A. (See Figure 12) G AS Uses IRF540N data and test conditions. I 16A di/d 340A/s, V V , SD DD (BR)DSS **When mounted on 1 square PCB (FR-4 or G-10 Material). For T 175C J recommended footprint and soldering techniques refer to application Pulse width 400s duty cycle 2%. note AN-994 2 www.irf.com