PD - 95531A IRF540ZPbF IRF540ZSPbF IRF540ZLPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance V = 100V DSS 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax R = 26.5m DS(on) G Lead-Free I = 36A D Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of 2 TO-220AB D Pak TO-262 applications. IRF540ZPbF IRF540ZSPbF IRF540ZLPbF Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, V 10V (Silicon Limited) I T = 25C GS 36 D C Continuous Drain Current, V 10V I T = 100C 25 A GS D C Pulsed Drain Current I 140 DM P T = 25C Power Dissipation 92 W D C Linear Derating Factor 0.61 W/C V Gate-to-Source Voltage 20 V GS Single Pulse Avalanche Energy E 83 mJ AS (Thermally limited) Single Pulse Avalanche Energy Tested Value E (Tested ) AS 120 Avalanche Current I AR See Fig.12a, 12b, 15, 16 A Repetitive Avalanche Energy E AR mJ T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R 1.64 C/W JC Junction-to-Case R 0.50 CS Case-to-Sink, Flat Greased Surface R 62 JA Junction-to-Ambient R JA Junction-to-Ambient (PCB Mount) 40 www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V / T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.093 V/C Reference to 25C, I = 1mA D R m Static Drain-to-Source On-Resistance 21 26.5 V = 10V, I = 22A DS(on) GS D V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A DS GS D gfs Forward Transconductance 36 V V = 25V, I = 22A DS D I DSS Drain-to-Source Leakage Current 20 A V = 100V, V = 0V DS GS 250 V = 100V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 20V GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q g Total Gate Charge 42 63 I = 22A D Q gs Gate-to-Source Charge 9.7 nC V = 80V DS Q gd Gate-to-Drain Mille) Charge 15 V = 10V GS t d(on) Turn-On Delay Time 15 V = 50V DD t r Rise Time 51 I = 22A D t d(off) Turn-Off Delay Time 43 ns R = 12 G t f Fall Time 39 V = 10V GS L D Internal Drain Inductance 4.5 Between lead, D nH 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package S and center of die contact C iss Input Capacitance 1770 V = 0V GS C Output Capacitance 180 V = 25V oss DS C rss Reverse Transfer Capacitance 100 pF = 1.0MHz C Output Capacitance 730 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C oss Output Capacitance 110 V = 0V, V = 80V, = 1.0MHz GS DS C eff. Effective Output Capacitance 170 V = 0V, V = 0V to 80V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 36 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 140 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 22A, V = 0V SD J S GS t Reverse Recovery Time 33 50 ns T = 25C, I = 22A, V = 50V rr DD J F di/dt = 100A/s Q Reverse Recovery Charge 41 62 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com