PD - 93850A IRF5800 HEXFET Power MOSFET Ultra Low On-Resistance A 1 6 D D P-Channel MOSFET V = -30V DSS Surface Mount 2 5 D D Available in Tape & Reel Low Gate Charge 3 4 G S R = 0.085 DS(on) Top View Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET power MOSFET with R 60% DS(on) less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It s unique thermal design and R reduction DS(on) TSOP-6 enables a current-handling increase of nearly 300% compared to the SOT-23. Parameter Max. Units V Drain- Source Voltage -30 V DS I T = 25C Continuous Drain Current, V -4.5V -4.0 D A GS I T = 70C Continuous Drain Current, V -4.5V -3.2 A D A GS I Pulsed Drain Current -32 DM P T = 25C Power Dissipation 2.0 D A P T = 70C Power Dissipation 1.3 D A Linear Derating Factor 0.016 W/C E Single Pulse Avalanche Energy 20.6 mJ AS V Gate-to-Source Voltage 20 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 62.5 C/W JA www.irf.com 1 01/13/03 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -30 V V = 0V, I = -250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.02 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.085 V = -10V, I = -4.0A GS D R Static Drain-to-Source On-Resistance DS(on) 0.150 V = -4.5V, I = -3.0A GS D V Gate Threshold Voltage -1.0 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 3.5 S V = -10V, I = -4.0A fs DS D -1.0 V = -24V, V = 0V DS GS I Drain-to-Source Leakage Current DSS -5.0 V = -24V, V = 0V, T = 70C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS I GSS Gate-to-Source Reverse Leakage 100 V = 20V GS Q Total Gate Charge 11.4 17 I = -4.0A g D Q Gate-to-Source Charge 2.3 nC V = -16V gs DS Q Gate-to-Drain Mille) Charge 2.2 V = -10V gd GS t Turn-On Delay Time 11.4 17 V = -15V, V = -10V d(on) DD GS t Rise Time 11 17 I = -1.0A r D t Turn-Off Delay Time 24 36 R = 6.0 d(off) G t Fall Time 14 20 R = 15 , f D C Input Capacitance 535 V = 0V iss GS C Output Capacitance 94 pF V = -25V oss DS C Reverse Transfer Capacitance 68 = 1.0MHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.0 (Body Diode) showing the G ISM Pulsed Source Current integral reverse 32 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -2.0A, V = 0V SD J S GS t Reverse Recovery Time 19 28 ns T = 25C, I = -2.0A rr J F Q Reverse Recovery Charge 16 24 nC di/dt = -100A/s rr Repetitive rating pulse width limited by Surface mounted on FR-4 board, t max. junction temperature. Starting T = 25C, L = 2.5mH J Pulse width 300s duty cycle R = 25 , I = -4.0A. (See Fig 10 ) G AS 2 www.irf.com